The present disclosure belongs to the field of organic electroluminescent materials, and specifically relates to a nitrogen-containing compound, an electronic component using the nitrogen-containing compound and an electronic device using the nitrogen-containing compound. The nitrogen-containing compound has a structure as shown in Formula 1. When the nitrogen-containing compound of the present disclosure is used in an organic electroluminescent device, properties of the device can be effectively improved. ##STR00001##

A compound of Formula (I)
D-S.sup.1-A-S.sup.2—B.sup.1,  Formula (I) wherein: A represents a conjugated chain of from 1 to 20 aromatic moieties independently selected from the group consisting of aromatic moieties, heteroaromatic moieties and E moieties, provided that A includes at least one E moiety, wherein E is selected from the group consisting of: E.sup.1 being a dibenzo[d,b]silole moiety of the structure: ##STR00001## E.sup.2 being a moiety of the structure: ##STR00002## and E.sup.3 being a moiety of the structure: ##STR00003## wherein E is connected in the conjugated chain of A and optionally to S.sup.1 or to S.sup.2 through covalent bonds at Y and Z; wherein each R is independently selected from the group consisting of straight chain or branched C.sub.1-C.sub.20 alkyl and C.sub.2-C.sub.20 alkenyl, optionally wherein from 1 to 5 CH.sub.2 groups are each replaced by an oxygen, provided that no acetal, ketal, peroxide or vinyl ether is present in the R group, and optionally wherein each H bonded to a C in each R group may independently be replaced by a halogen; wherein the X moieties are the same and are selected from the group consisting of hydrogen, straight chain or branched C.sub.1-C.sub.8 alkyl, straight chain or branched C.sub.1-C.sub.8 alkoxyl and a halogen, wherein each E moiety may have the same or different X moieties, wherein W is either an oxygen or sulfur atom, D represents a moiety having one or more cross-linkable functionalities, S.sup.1 and S.sup.2 are flexible linker groups; and B.sup.1 represents a moiety having one or more cross-linkable functionalities or a hydrogen atom, with the proviso that when B.sup.1 represents a hydrogen atom, D represents a moiety having at least two cross-linkable functionalities.

An imaging device includes a pixel including a permittivity modulation element that includes opposite and pixel electrodes and a permittivity modulation structure whose permittivity changes according to the radiation of light, a capacitive element that includes first and second electrodes, and a detection circuit that outputs a signal corresponding to the potential of the pixel electrode. Also provided are a voltage supply circuit that applies first and second voltages in different first and second periods to one of the opposite electrode and the first electrode, and a signal processing circuit that generates a third signal being a difference between a first signal output from the detection circuit in the first period and a second signal output from the detection circuit in the second period. The potential difference between the opposite electrode and the first electrode when the second voltage is applied is less than when the first voltage is applied.

Disclosed are a compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel, and an electronic device.

##STR00001##

In Chemical Formula 1, X.sup.1, A, and R.sup.1 to R.sup.5 are as described in the specification.

Disclosed are a compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel, and an electronic device.

##STR00001##

In Chemical Formula 1, X.sup.1, A, and R.sup.1 to R.sup.5 are as described in the specification.

Photopolymers, monomers, compositions including photopolymers and a dopant, and methods, including methods for eliciting a photomechanical response. The dopant may be a triplet sensitizing dopant. The exposing of compositions to the one or more wavelengths of electromagnetic radiation may elicit a photomechanical response via a triplet excited state mechanism.

The present embodiment provides a semiconductor element that can generate power with high efficiency and has high durability.

A multilayer junction photoelectric conversion element according to an embodiment comrises: a first electrode; a first photoactive layer including a perovskite semiconductor; a first passivation layer; a first doped layer; a second photoactive layer containing silicon; and a second electrode, in this order. The multilayer junction photoelectric conversion element further comprises a light scattering layer including a plurality of mutually separated silicon alloy layers that penetrate a part of the passivation layer and electrically connect the first photoactive layer and the first doped layer. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

A method for forming a hole transport layer on a surface of a substrate includes providing M target materials comprising inorganic hole transport materials and forming the hole transport layer on the surface of the substrate using magnetron sputtering. The hold transport layer at least comprises N consecutive sub-layers. M and N are integers and 2≤N≤M. One of the M target materials is a doped target material further comprising a doping material.

A photoelectric conversion element having a high photoelectric conversion efficiency in a visible light region (particularly, a wavelength range of 450 to 650 nm) even after being subjected to heat treatment (annealing) is provided. In addition, an imaging element, an optical sensor, and a compound are provided.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, and the photoelectric conversion film contains a compound represented by Formula (1).

##STR00001##

##STR00002##

##STR00003##

Various perovskite solar cell embodiments include a flexible metal substrate (e.g., including a metal doped TiO2 layer), a perovskite layer, and a transparent electrode layer (e.g., including a dielectric/metal/dielectric structure), wherein the perovskite layer is provided between the flexible metal substrate and the transparent electrode layer. Also, various tandem solar cell embodiments including a perovskite solar cell and either a quantum dot solar cell, and organic solar cell or a thin film solar cell.