An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.

The present invention provides a solid junction photoelectric conversion element module including a first photoelectric conversion element, a second photoelectric conversion element, a connection portion, and a base material. The first photoelectric conversion element and the second photoelectric conversion element are disposed adjacently to each other on a surface of the base material. The first photoelectric conversion element sequentially includes a first conductive layer, a power generation layer including a perovskite layer, and a second conductive layer, and the first conductive layer of the first photoelectric conversion element is in contact with the base material. The second photoelectric conversion element sequentially includes a first conductive layer, a power generation layer including a perovskite layer, and a second conductive layer, and the first conductive layer of the second photoelectric conversion element is in contact with the base material.

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.

An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack on the substrate and including an NIR emitter configured to emit NIR light and an NIR detector. The NIR light sensor stack may be between the substrate and the OLED stack. The OLED panel may be included in one or more various electronic devices.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

A photoelectric conversion device, comprising a semiconductor substrate on which a plurality of pixels are arrayed, and an insulating member which is transparent and configured to cover the semiconductor substrate, wherein the insulating member includes at least three portions whose thickness are different from each other so as to increase types of wavelengths of light that are to be ripple reduction targets.

A display device includes: a display layer including a plurality of light emitting areas, and a plurality of sensing areas; and a sensor layer on the display layer, and including: a first sensing electrode including: a plurality of sensing patterns; and a connection pattern connected to the plurality of sensing patterns; and a second sensing electrode. Each of the plurality of sensing patterns includes: a first-first line extending in a first direction; and a second-first line extending in a second direction crossing the first direction. At least one of the connection pattern or the second sensing electrode includes a cross line extending in a direction different from the first and second directions.

A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.