An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.

Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunneling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLED coupled to the photodetector.

The present disclosure relates to a device that includes an active layer and a first charge transport layer, where the first charge transport layer includes a first layer and a second layer, the first layer is in contact with the second layer, the second layer is positioned between the first layer and the active layer, the first layer comprises a first carbon nanostructure, and the second layer includes a second carbon nanostructure.

A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

An organic device is disclosed. In an embodiment the organic device includes an organic component designed to emit and/or detect radiation, wherein the organic component has a first layer stack and a radiation passage surface and an organic protection diode having a second layer stack, wherein the organic protection diode is arranged directly after the organic component in a stacking direction (Z), and wherein the organic protection diode is designed to protect the organic component from an electrostatic discharge and/or from a polarity reversal of the organic component.

A method for the fabrication of organic electronic devices includes forming a fluoropolymer layer over a first area of a substrate and a first set of organic electronic devices. The first set of organic electronic devices are pre-fabricated on a second area of the substrate. The method further includes selectively removing the formed fluoropolymer layer from areas within the first area of the substrate by using a liquid solvent. The method further includes subsequent fabrication of organic electronic devices on the substrate.

An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region; a photoelectric converter; a first hydrogen block layer; an interlayer insulating layer; and a separation groove. The photoelectric converter includes a first electrode, a second electrode, and an electric charge accumulation layer and a photoelectric conversion layer. The first electrode is provided on a light receiving surface side of the semiconductor substrate and includes a plurality of electrodes. The second electrode is disposed to be opposed to the first electrode. The electric charge accumulation layer and the photoelectric conversion layer are stacked and provided in order between the first electrode and the second electrode and extend in the effective pixel region. The first hydrogen block layer covers a top and a side surface of the photoelectric conversion layer and a side surface of the electric charge accumulation layer. The interlayer insulating layer is provided between the semiconductor substrate and the photoelectric converter. The separation groove separates the interlayer insulating layer in at least a portion of a region between the effective pixel region and the peripheral region. The separation groove has a side surface and a bottom surface covered with the first hydrogen block layer.

A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), where the second level is disposed on top of the first level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the second level includes a plurality of bond pads, where the bonding structure includes oxide to oxide bonding.

The present invention relates to a display device.

A method for producing an organic electronic device is disclosed. In an embodiment the method includes applying an organic material to a substrate to form at least one organic functional layer, applying a patterned electrode material to the at least one organic functional layer by a first mask, and removing the organic material from regions which are free of the electrode material.