A solid-state imaging device capable of achieving higher image quality is provided. Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit. An insulation film portion is disposed at least on a part of an outer circumference of the conductive portion. The insulation film portion includes at least one layer of an insulation film. The at least one layer of the insulation film has fixed charge of a type identical to a type of charge accumulated in the charge accumulation unit.

Continuing a sequence of lensless light-field imaging camera patents beginning 1999, the present invention adds light-use efficiency, predictive-model design, distance-parameterized interpolation, computational efficiency, arbitrary shaped surface-of-focus, angular diversity/redundancy, distributed image sensing, plasmon surface propagation, and other fundamentally enabling features. Embodiments can be fabricated entirely by printing, transparent/semi-transparent, layered, of arbitrary size/curvature, flexible/bendable, emit light, focus and self-illuminate at zero-separation distance between (planar or curved) sensing and observed surfaces, robust against damage/occulation, implement color sensing without use of filters or diffraction, overlay on provided surfaces, provided color and enhanced multi-wavelength color sensing, wavelength-selective imaging of near-infrared/near-ultraviolet, and comprise many other fundamentally enabling features. Embodiments can be thinner, larger/smaller, more light-use efficient, and higher-performance than recently-popularized coded aperture imaging cameras. Vast ranges of diverse previously-impossible applications are enabled: credit-card cameras/phones, in-body monitoring of healing/disease, advanced biomarker analysis systems, perfect eye-contact video conferencing, seeing fabrics/skin/housings, and manufacturing-monitoring, wear-monitoring, and machine vision capabilities.

A semiconductor device includes a semiconductor substrate and at least one perovskite layer disposed on the substrate. The semiconductor substrate includes a single-crystal semiconductor and the at least one perovskite layer includes a single-crystal organometallic-halide ionic solid perovskite.

Provided herein are flashing ratchets that produce transport based on the oscillating application of regularly-spaced, asymmetric potentials. In particular, devices are provided that transport electrons without the requirement of an overall source-drain bias favoring electron transport.

An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic layer provided between the first electrode and the second electrode and at least including a photoelectric conversion layer; and a first semiconductor layer provided between the second electrode and the organic layer and having an electron affinity of 4.5 eV or more and 6.0 eV or less, the first semiconductor layer including a first carbon-containing compound and a second carbon-containing compound, the first carbon-containing compound having an electron affinity greater than 4.8 eV or an electron affinity greater than a work function of the second electrode, the second carbon-containing compound having an ionization potential greater than 5.5 eV.

According to an aspect, a detection device includes a substrate and a plurality of photodiodes arranged on the substrate. Each of the photodiodes includes a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode that are stacked on the substrate in the order as listed. A plurality of the lower electrodes are each provided with a plurality of openings.

Provided is a photoelectric conversion element including: a first electrode having opaqueness to light and formed of a metal; a hole blocking layer provided on the first electrode; an electron transport layer provided on the hole blocking layer; a hole transport layer provided on the electron transport layer; and a second electrode provided on the hole transport layer and having transmissivity to light, wherein the hole blocking layer contains an oxide of the metal in the first electrode.

A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

Disclosed herein is a detector (110) containing: at least one longitudinal optical sensor (114), wherein the longitudinal optical sensor (114); and at least one evaluation device (140), wherein the evaluation device (140) is designed to generate at least one item of information on a longitudinal position of the object (112) by evaluating the longitudinal sensor signal of the longitudinal optical sensor (114). Also disclosed herein are articles containing the detector (110), and methods for optical detection of objects using the detector (110).

The present disclosure relates to a nano-scale transistor. The nano-scale transistor includes a source electrode, a drain electrode, a gate electrode and a nano-heterostructure. The nano-heterostructure is electrically coupled with the source electrode and the drain electrode. The gate electrode is insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.