A solid-state imaging device capable of achieving higher image quality is provided.

Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit. An insulation film portion is disposed at least on a part of an outer circumference of the conductive portion. The insulation film portion includes at least one layer of an insulation film. The at least one layer of the insulation film has fixed charge of a type identical to a type of charge accumulated in the charge accumulation unit.

Provided are an imaging device and an electronic apparatus capable of suppressing deterioration in performance due to charge accumulation. An imaging device includes: a photoelectric conversion layer having a first surface and a second surface located on an opposite side to the first surface; a first electrode located on a side of the first surface; and a second electrode located on a side of the second surface. In a thickness direction of the photoelectric conversion layer, when a region overlapping with the first electrode is defined as a first region, and a region deviating from the first electrode is defined as a second region, a first film thickness of the photoelectric conversion layer in at least a part of the first region is thinner than a second film thickness of the photoelectric conversion layer in the second region.

A fused polycyclic aromatic compound represented by formula (1) is provided. In formula (1), one of R.sub.1 and R.sub.2 is a substituent group represented by general formula (2). In formula (2), n is from 0 to 2, R.sub.3 and R.sub.4 each independently represent a divalent linking group obtained by removing two hydrogen atoms from an aromatic hydrocarbon compound or a divalent linking group obtained by removing two hydrogen atoms from a 6-membered or more heterocyclic compound containing a nitrogen atom, an oxygen atom or a sulfur atom, with a plurality of R.sub.4 groups able to be the same as or different from each other when n is 2, and R.sub.5 represents a residue obtained by removing one hydrogen atom from an aromatic hydrocarbon compound or a residue obtained by removing one hydrogen atom from a 6-membered or more heterocyclic compound containing a nitrogen atom, an oxygen atom or a sulfur atom.

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An integrated circuit including a first circuit module and a second circuit module is provided. A layer stack may include one or multiple metal layers with a power segment and a ground segment connected to the first circuit module and the second circuit module, which form a resonant current loop. A pickup loop may be inductively coupled to the resonant current loop to dampen its resonance, thereby making the IC compliant with its EMC requirements or removing functional errors such as problems in the signal or power integrity.

An imaging device includes a pixel region including an amplifying transistor that includes a first gate and that outputs a signal voltage corresponding to an amount of signal charge, a first peripheral region including at least one first peripheral transistor including a second gate, the first peripheral region being located outside the pixel region, and a semiconductor substrate provided with the amplifying transistor and the at least one first peripheral transistor. A gate length of the second gate is shorter than a gate length of the first gate. When at least one type of impurity that contributes to suppression of transient enhanced diffusion of a conductive impurity is defined as a first specific species, the at least one first peripheral transistor includes a first specific layer located in the semiconductor substrate, the first specific layer containing a conductive impurity and the first specific species.

A light conversion package for a semiconductor light source includes a light conversion block, a substrate, and an interconnector. The light conversion block is positioned to receive incident light from the semiconductor light source and acts to convert the incident light to light having a different spectral distribution. The interconnector attaches the light conversion block to the substrate and limits a thermal resistance between the light conversion block and the substrate so that the substrate can efficiently sink heat from the light conversion block. The interconnector and the substrate together may still provide high reflectivity.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack between the substrate and the OLED stack and including an NIR emitter configured to emit NIR light and an NIR detector. The OLED panel may be included in one or more various electronic devices.

A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.

An object of the present invention is to provide a photoelectric conversion element that exhibits excellent external quantum efficiency and responsiveness to light at all wavelengths in a red wavelength region, a green wavelength region, and a blue wavelength region. Another object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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