An imaging device includes pixels. Each of the pixels includes a first single-crystal semiconductor layer transmitting light, a first electrode, and a photoelectric conversion layer in contact with the first single-crystal semiconductor layer. The photoelectric conversion layer is positioned between the first single-crystal semiconductor layer and the first electrode and absorbs the light. The first single-crystal semiconductor layer, the photoelectric conversion layer, and the first electrode are arranged in order mentioned such that the light after passing through the first single-crystal semiconductor layer is incident on the photoelectric conversion layer.

A compound of formula (I): EAG-EDG-EAG (I) wherein EDG is an electron-donating group comprising a polycyclic heteroaromatic group and each EAG is an electron-accepting group of formula (II): (II) wherein R.sup.10 in each occurrence is H or a substituent; ---- is a bond to EDG; and each X.sup.1-X.sup.4 is independently CR.sup.11 or N wherein R.sup.11 in each occurrence is H or a substituent, with the proviso that at least one occurrence of at least one of X.sup.1-X.sup.4 is N. The compound may be used as an acceptor in a bulk heterojunction layer of an organic photodetector.

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An optoelectronic assembly including an optically active region configured for emitting and/or absorbing light, and an optically inactive region configured for component-external contacting of the optically active region is provided. The optically inactive region includes a dielectric structure and a first electrode on or above a substrate, an organic functional layer structure on the first electrode in physical contact with the first electrode and the dielectric structure, and a second electrode in physical contact with the organic functional layer structure and above the dielectric structure, wherein the organic functional layer structure at least partly overlaps the dielectric structure in such a way that the part of the second electrode above the dielectric structure is free of a physical contact of the second electrode with the dielectric structure.

The present technology relates to a solid-state imaging element, a method for manufacturing a solid-state imaging element, a photoelectric conversion element, an imaging device, and an electronic apparatus that are capable of realizing highly efficient photoelectric conversion of blue light with organic photoelectric conversion element.

A first organic semiconductor having a characteristic of absorbing blue light, a second organic semiconductor having a characteristic of absorbing blue light and a characteristic as a hole-transporting material having crystallinity, and a third organic semiconductor including a fullerene derivative are mixed to form an organic photoelectric conversion layer. The present technology can be applied to a solid-state imaging element.

A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material. The second organic semiconductor material has a Highest Occupied Molecular Orbital (HOMO) level being deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and having a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material. The third organic semiconductor material has a crystalline property and has a linear absorption coefficient of 10000 cm.sup.−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material. The second organic semiconductor material has a Highest Occupied Molecular Orbital (HOMO) level being deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and having a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material. The third organic semiconductor material has a crystalline property and has a linear absorption coefficient of 10000 cm.sup.−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.

An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.

An imaging device includes a first photoelectric converter, a second photoelectric converter, and a first capacitive element. The first photoelectric converter converts light having a wavelength in a first wavelength region into first electric charge. The second photoelectric converter converts light having a wavelength in a second wavelength region into second electric charge. The second photoelectric converter is arranged at a different height from the first photoelectric converter in a thickness direction of the imaging device. The first capacitive element accumulates the first electric charge and the second electric charge.

A semiconductor device includes: a first capacitor element that includes a first electrode, a second electrode, and a dielectric layer positioned between the first electrode and the second electrode; and a second capacitor element that includes a third electrode and an insulating layer positioned between the second electrode and the third electrode. The first capacitor element includes at least one first trench portion.