According to an aspect, a detection device includes a plurality of optical sensors arranged on a substrate. Each of the optical sensors includes a first photodiode and a second photodiode that is coupled in series and in an opposite direction to the first photodiode.

An imaging device includes a photoelectric conversion element that includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode; and a charge detection circuit that reads a charge generated in the photoelectric conversion element. The photoelectric conversion layer is a bulk heterojunction layer that contains a phthalocyanine derivative or a naphthalocyanine derivative and a fullerene polymer. In the fullerene polymer, a fullerene or a fullerene derivative is crosslinked by a crosslinking structure represented by general formula (1) below. In general formula (1), X is a bifunctional functional group.

NCH.sub.2XCH.sub.2N  (1)

An electrode connection structure is provided and includes a substrate, a first electrode, a second electrode, a semiconductor layer, a third electrode, and a conductive block. The first electrode and the second electrode are located on the substrate. The semiconductor layer is located on the first electrode and the second electrode. The third electrode is on the semiconductor layer. The conductive block penetrates through the semiconductor layer and the third electrode and directly contacts the second electrode and the third electrode. A first upper surface of the conductive block and a second upper surface of the third electrode are in different planes.

An electrode connection structure is provided and includes a substrate, a first electrode, a second electrode, a semiconductor layer, a third electrode, and a conductive block. The first electrode and the second electrode are located on the substrate. The semiconductor layer is located on the first electrode and the second electrode. The third electrode is on the semiconductor layer. The conductive block penetrates through the semiconductor layer and the third electrode and directly contacts the second electrode and the third electrode. A first upper surface of the conductive block and a second upper surface of the third electrode are in different planes.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

A novel electric rectifier for use in a rectenna device is provided. The rectenna device can advantageously be used in a variety of applications. The electric rectifier comprises an integrated structure comprising: a diode structure comprising first and second electrodes located in first and second conductive layers respectively and an insulating layer between them, the diode structure being configured and operable for receiving an input signal and generating output signal indicative thereof, and a compensation structure electrically connected in parallel to said diode structure and being configured to compensate the parasitic capacitance of the diode structure when a frequency spectrum of the input signal is beyond the diode's cutoff frequency.

A display panel is provided, the display panel including a color filter substrate; a plurality of fingerprint pixels disposed on a side of the color filter substrate; a plurality of fingerprint pixels disposed on a side of the color filter substrate; wherein each of the fingerprint pixels comprises a pixel unit and a fingerprint sensor; and a first black matrix disposed between the adjacent pixel units, wherein the fingerprint sensor is disposed between the color filter substrate and the first black matrix.

The present disclosure provides a fingerprint identification substrate and a display device. The fingerprint identification substrate includes a base substrate, a plurality of photosensitive modules on the base substrate, a collimating optical structure located on light entering sides of the photosensitive modules, a plurality of function layers and an insulation layer between every two adjacent function layers; where the photosensitive modules are configured to collect light rays reflected by a fingerprint; and the collimating optical structure includes light shading layers and light transmitting layers arranged alternately; where each of the light shading layers has a plurality of light transmitting holes; orthographic projections of the light transmitting holes on the base substrate are in orthographic projections of the photosensitive modules on the base substrate.