Embodiments of the present disclosure disclose a quantum dot material and related applications. The quantum dot material includes: quantum dots, and ligands connected with the quantum dots, and further includes isolation units, wherein the isolation units are cyclic molecules, and the ligands are configured to bond with the cyclic molecules through electrostatic force, so that the quantum dots and the ligands are wrapped with the multiple isolation units; and the isolation units are configured to isolate the quantum dots.

A quantum dot light-emitting device and a manufacturing method therefor, and a display panel. The quantum dot light-emitting device comprises: a quantum dot layer and an electron transport layer adjacent to the quantum dot layer; the electron transport layer comprises a first group, and the quantum dot layer comprises a second group; the first group and the second group each comprise a hydrophilic group. The first group and the second group are combined by means of a hydrogen bond on contact surfaces of the quantum dot layer and the electron transport layer, to enhance an interface interaction force between the quantum dot layer and the electron transport layer, thereby reducing interface defects of the quantum dot layer and the electron transport layer, and improving the electroluminescence performance and stability of the quantum dot device.

A semiconductor device according to the present invention includes a substrate, a plurality of electrodes on the substrate, an insulator provided with one or a plurality of openings exposing at least one electrode among the plurality of electrodes on the substrate, the insulator covering at least a portion of the plurality of electrodes, and a semiconductor sheet on the insulator and one or a plurality of exposed portions exposed from the one or the plurality of openings on the substrate.

The present invention relates to an optoelectronic device comprising a substrate having a first and a second substantially planar face, a series of grooves in the first substantially planar face, and a first and a second electrical conductor on the second substantially planar face; wherein a first face of the first electrical conductor and a first face of the second electrical conductor are reflective.

The invention relates to a compound of the general formula I

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to an optoelectronic component containing said type of compound, and to the use of said type of compound in optoelectronic components.

A method for preparing a quantum dot film, including: in the presence of an inert gas atmosphere, providing a mixed solution system comprising first quantum dots and a fatty acid solution of first ligands, and performing ligand exchange reaction under a first heating condition, to prepare second quantum dots having the first ligands having a structure of Formula 1 attached to surfaces thereof; and depositing the second quantum dots on a substrate to prepare a quantum dot prefabricated film, depositing a mixed solution containing an initiator and a cross-linker on the quantum dot prefabricated film, and heating to crosslink the first ligands on the surfaces of the second quantum dots; or alternatively, adding an initiator and a cross-linker to the second quantum dots, and depositing a resulting mixed system onto a substrate, heating to crosslink the first ligands on the surfaces of the second quantum dots.

A flexible display device including: a display substrate having a display area and a peripheral area surrounding the display area; a plurality of pixels formed in the display area; a passivation layer covering the pixels from the top to protect the pixels; a polarization film layer provided at the top of the passivation layer and of which an edge is extended outside an edge of the passivation layer; and a film wiring made of a flexible material of which one end is connected to the peripheral area.

A photoelectric conversion device includes: a first carrier transport layer; a photoelectric conversion layer containing an ionic crystalline compound; and a polysiloxane layer between the first carrier transport layer and the photoelectric conversion layer, the polysiloxane layer containing a polysiloxane having a polar functional group R.sup.1.

A photoelectric conversion device includes: a first carrier transport layer; a photoelectric conversion layer containing an ionic crystalline compound; and a polysiloxane layer between the first carrier transport layer and the photoelectric conversion layer, the polysiloxane layer containing a polysiloxane having a polar functional group R.sup.1.

A solar cell includes a first electrode, a first electron transport layer, a second electron transport layer, a photoelectric conversion layer, and a second electrode. The first electron transport layer includes carbon and a porous electron transport material.