The present invention relates to preparation and application of a novel quadridentate platinum (II) complex, and belongs to the field of OLED organic electroluminescent materials. The complex of the present invention has NCNC chelating coordination, a stable structure, a spiro ring structure in the skeleton, a strong molecular stereoscopic property, and weak intermolecular interaction, so that mutual stacking between complex molecules is avoided, the formation of an excimer is greatly inhibited, and thus the efficiency of an OLED device is improved. The complex of the present invention has high fluorescence quantum efficiency, great thermal stability and low quenching constant, and can be used for manufacturing a red-light OLED device with high luminescence efficiency and low roll-off.

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A light-emitting device, a material screening method and a display panel. The light-emitting device of a first aspect of the present application includes a light-emitting layer including a host material and a guest material. When a carrier is injected into the light-emitting layer, there is a defect energy Et between the host material and the guest material, and an absolute value of the defect energy Et is greater than or equal to 0.03 eV. A light-emitting efficiency of the light-emitting device in a high-luminance state is improved and an operating voltage of the light-emitting device is reduced, which can ensure a display quality of the display panel in the high-luminance state and reduce an overall power consumption of the display panel.

A light-emitting device includes a light-emitting layer. The light-emitting layer includes a host material. The host material includes a p-type material and an n-type material. The p-type material and the n-type material are configured to form an exciplex. An absolute value of a difference between a wavelength corresponding to a peak of a normalized fluorescence emission spectrum of the exciplex and a wavelength corresponding to a peak of a normalized fluorescence emission spectrum of the n-type material being less than or equal to 5 nm.

Provided are a polymer thin-film transistor and a method of fabricating the same. Donor-acceptor copolymer-based field-effect transistors (FETs) have attracted considerable attention from technological and academic perspectives due to their low band gap, high mobility, low cost, easy solution processability, flexibility, and stretchability. Large-area films can be formed through meniscus-guided coating among various solution-processing techniques. 29-Diketopyrrolopyrrole-selenophene vinylene selenophene (29-DPP-SVS) donor-acceptor copolymer-based FETs have already shown excellent performance due to their short π-π stacking distance and strong π-π interaction. Charge carrier mobility of these types of semiconductor materials significantly depends on an applied electric field. Accordingly, detailed analysis of the electric-field dependency of charge carrier mobility is necessary to understand the transport mechanism within the material. Therefore, 29-DPP-S VS-based FETs are fabricated by varying the blade coating (BC) speed of a semiconductor layer. The effect of the BC speed on the electrical characteristics of the FETs is studied through the analysis of electric-field-dependent mobility. The results show that the charge carrier mobility of different FETs depends on the applied electric field and that the type of dependency is Poole-Frenkel. At an optimized BC speed (2 mm s.sup.−1), the device shows maximum zero-field mobility (3.39 cm.sup.2V.sup.−1s.sup.−1) due to the low trap density within the conductive channel.

Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.

A display device including a lower electrode layer including a first lower electrode having first and second areas, and a second lower electrode having third and fourth areas; a pixel defining layer covering the second and fourth areas; a first electroluminescent layer having an outline substantially surrounding an outline of the first area; a second electroluminescent layer having an outline substantially surrounding an outline of the third area; an upper electrode having an outline substantially surrounding the outlines of the first and second electroluminescent layers; and a color filter layer including a first color filter having an area of which an outline thereof is between the outline of the first area and the outline of the first electroluminescent layer; and a second color filter having an area of which an outline thereof is between the outline of the third area and the outline of the second electroluminescent layer.

The present invention relates to a process for the production of a layered body (1), at least comprising the process steps: I) provision of a photoactive layer comprising a material having a perovskite type crystal structure; II) superimposing the photoactive layer at least partially with a coating composition A) comprising an electrically conductive polymer a) and an organic solvent b); III) at least partial removal of the organic solvent b) from the coating composition A) superimposed in process step II), thereby obtaining an electrically conductive layer superimposed on the photoactive layer. The present invention also relates to a layered body obtainable by this process, to dispersions, to an electronic device, to a process for the preparation of a photovoltaic device and to the photovoltaic device that is obtainable by this process.

Methods' and compositions for making coated substrates using a co-solvent method are disclosed. Embodiments of the present disclosure relate in general to methods and compositions for making thin films of organometallic halides. According to one aspect, organometallic halides are deposited from solution on the surface of a substrate at temperatures between about 10 C and 50 C. According to one aspect, organometallic halides are deposited from solution on the surface of a substrate at room temperature.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.