The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

A heterocyclic compound represented by Chemical Formula 1, and an organic light emitting device including the same, and the heterocyclic compound providing improved efficiency, low driving voltage, and improved lifetime characteristics of the organic light emitting device.

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In the present invention, a composition comprising two types of thienothiophene compounds selected from the group consisting of the compounds indicated by formulas (1) to (4) (in formulas (1) to (4), either one of R.sub.1 and R.sub.2 represents an alkyl group, an aromatic hydrocarbon group having an alkyl group or a heterocyclic group having an alkyl group, and the other represents a hydrogen atom, an aromatic hydrocarbon group, a heterocyclic group or a substituent represented by formula (5) (in formula (5), R.sub.3 represents an aromatic hydrocarbon group or a heterocyclic group)) can form an organic thin film which is homogeneous over a large area, and an organic semiconductor device including the organic thin film is capable of exhibiting high mobility.

A perovskite material including an organic-inorganic perovskite structure of formula (I), A.sub.nMX.sub.3 (I), n being the number of cation A and an integer >4, A being a monovalent cation selected from inorganic cations Ai and/or from organic cations Ao, M being a divalent metal cation or a combination thereof, X being a halide and/or pseudohalide anion or a combination thereof, wherein at least one cation A is selected from organic cations Ao, the inorganic cations Ai are independently selected from Li.sup.+, Na.sup.+, K.sup.+, Rb.sup.+, Cs.sup.+, or Tl.sup.+ and the organic cations Ao are independently selected from ammonium (NH.sub.4.sup.+), methyl ammonium (MA) (CH.sub.3NH.sub.3.sup.+), ethyl ammonium (CH.sub.3CH.sub.2NH.sub.3).sup.+, formamidinium (FA) (CH(NH.sub.2).sub.2.sup.+), methylformamidinium (CH.sub.3C(NH.sub.2).sub.2.sup.+), guanidium (C((NH).sub.2).sub.3.sup.+), tetramethylammonium ((CH.sub.3).sub.4N.sup.+), dimethylammonium ((CH.sub.3).sub.2NH.sub.2.sup.+) or trimethylammonium ((CH.sub.3).sub.3NH.sup.+).

The present invention relates to metal complexes and electronic devices, in particular organic electroluminescent devices, containing said metal complexes.

The present invention relates to a method for producing a solid state solar cell, including the steps of providing a conductive support layer or current collector, applying a metal oxide layer on the conducting support layer, applying at least one sensitizer layer onto the metal oxide layer or onto a first optional layer covering the metal oxide layer, the first optional layer including a charge transporting layer, applying a second optional layer onto the sensitizer layer, the second optional layer being selected from a charge transporting layer, a protective layer, or a combination of both layers, and providing a counter electrode or a metal electrode onto the sensitizer layer or the second optional layer. The at least one sensitizer layer includes an organic-inorganic or metal halide perovskite and is treated by the application of a vacuum before the annealing of the sensitizer.

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q.sup.0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q.sup.1) connects with one siloxy group, and the silicon atom of the second configuration (Q.sup.2) connects with two siloxy groups, and the silicon atom of the third configuration (Q.sup.3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q.sup.4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

Disclosed is a perovskite light-emitting device with reduced defects in a perovskite thin film. The passivation layer in the perovskite light-emitting device is formed on the upper part of the perovskite thin film to eliminate defects in the perovskite nanocrystalline particles and resolve charge imbalance in the device, thereby improving maximum efficiency and maximum luminance of the light-emitting device.

Perovskite single crystal X-ray radiation detector devices including an X-ray wavelength-responsive active layer including an organolead trihalide perovskite single crystal, a substrate layer comprising an oxide, and a binding layer disposed between the active layer and the substrate layer. The binding layer including a binding molecule having a first functional group that bonds to the organolead trihalide perovskite single crystal and a second functional group that bonds with the oxide. Inclusion of the binding layer advantageously reduces device noise while retaining signal intensity.

A polycyclic aromatic compound consisting of a substructure represented by Formula (1A) and at least two substructures represented by Formula (1B):

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(A to C ring is an aryl ring which may be substituted, R.sup.XD is an aryl which may be substituted and bonded to A ring via a dashed-line which is —X—, the substructure represented by Formula (1B) is bonded to a ring constituting atom of the aryl or heteroaryl ring in one selected from the group consisting of A ring, B ring and R.sup.XD, and C ring and R.sup.XE in another substructure represented by Formula (1B) at position *, C ring is bonded to the above-selected ring, R.sup.XE is an aryl which may be substituted and bonded to the above-selected ring or X, Y is B, X is >N—R (R is an aryl which may be substituted)) is useful as a material for an organic device.