The present disclosure relates to a display substrate, a method for preparing the same, and a display device. The display substrate of the present disclosure includes a base substrate, a pixel definition layer located on the base substrate, and a first pixel and a second pixel that are adjacent to each other and defined by the pixel definition layer, in which a spacer function layer for blocking hole transport between adjacent pixels is arranged at at least a part of a contact interface between the second hole transport layer in the second pixel and the light function layer in the first pixel. By providing the spacer function layer, the present disclosure effectively prevents the migration of holes between the hole transport layers of adjacent pixels or between the hole transport layer and the light emitting layer, thereby avoiding accompanying light emission between adjacent pixels.

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 .Math.m to about 2 .Math.m, and a length of the channel of the third transistor is in a range of about 1 .Math.m to about 2.5 .Math.m.

A composition including a first compound and a second compound, wherein the first compound is an organometallic compound represented by Formula 1, the second compound is an organometallic compound represented by Formula 2, the first compound and the second compound are different from each other, the first compound and the second compound are each not tris[2-phenylpyridine]iridium, and |λP(Ir1)-λP(Ir2)| is in a range of 0 nm to about 30 nm, and at least one of Expressions 1 to 4 presented in the specification is satisfied,

Ir(L.sub.11).sub.n11(L.sub.12).sub.n12(L.sub.13).sub.n13  Formula 1

Ir(L.sub.21).sub.n21(L.sub.22).sub.n22(L.sub.23).sub.n23  Formula 2

wherein L.sub.11 to L.sub.13, L.sub.21 to L.sub.23, n11 to n13, and n21 to n23 are as provided herein.

An organic light-emitting device includes a mixed layer, an emission layer, and a buffer layer and satisfies one of Equation 1 or Equation 2 and Equation 3:
T1(D)≥T1(Mix)+0.3 eV  Equation 1
T1(H)≥T1(Mix)+0.3 eV  Equation 2
T1(Mix)<T1(Buffer)+0.5 eV.  Equation 3

A display apparatus includes: an organic light emitting diode (OLED) structure including in which at least one blue light-emitting unit and at least one green light-emitting unit are stacked to provide incident light in which the blue incident light and the green incident light are mixed; a first pixel, a second pixel, and a third pixel disposed on the OLED structure; color conversion layers disposed on at least two of the first, the second, or the third pixels, and including quantum dots for converting the mixed incident from the OLED structure into light of a predetermined color; and first, second, and third color filters disposed on the first, the second, and the third pixels, respectively, to absorb or block light of a predetermined wavelength band, wherein a conversion value of an area of a spectrum in a wavelength region of 380 nanometers to 780 nanometers of the green incident light with respect to a difference between a wavelength at the maximum transmittance of the second color filter and the medial wavelength of the incident green light (Δλ) may be 3.6 or greater and 13 or less.

The present disclosure provides a light emitting device, a display substrate and a display equipment. The light emitting device includes a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer and an electron injection layer that are stacked in sequence; the light emitting layer includes a plurality of light emitting units, and the wavelengths of lights emitted by at least two of the plurality of light emitting units are different from each other; a hole mobility of the electron blocking layer is greater than or equal to a hole mobility of the hole injection layer or the hole transport layer; and a square resistance of the hole injection layer and a square resistance of the hole transport layer are both greater than or equal to 5×10.sup.10 Ω/sq.

An organic light-emitting device including a first electrode, a second electrode facing the first electrode, and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer includes an emission layer, wherein the emission layer includes an electron transport host, a hole transport host, and a dopant, wherein the dopant includes an organometallic compound, and wherein the organometallic compound does not comprise iridium, wherein the organic light-emitting device satisfies predetermined parameters described in the specification.

A display device, an electronic device, or a lighting device that is unlikely to be broken is provided. A flexible first substrate and a flexible second substrate overlap with each other with a display element provided therebetween. A flexible third substrate is bonded on the outer surface of the first substrate, and a flexible fourth substrate is bonded on the outer surface of the second substrate. The third substrate is formed using a material softer than the first substrate, and the fourth substrate is formed using a material softer than the second substrate.

A thin film transistor array panel and a manufacturing method are disclosed herein. The thin film transistor array panel includes a data line, a first block of a source electrode, a third block of a drain electrode, and an electrode layer which are formed by a first metal layer disposed on a baseplate; a second block of the source electrode, a fourth block of the drain electrode are formed by a second metal layer which is disposed on the first metal layer. The first block and the second block overlap to combine integrally. The third block and the fourth block overlap to combine integrally. The present invention can decrease the electrical resistance of each of the source electrode and the drain electrode.

A display apparatus having high external light transmittance and a manufacturing method of the display apparatus are provided, wherein the display apparatus does not substantially include a common electrode in a transmission region. Particularly, a display apparatus includes a first substrate, a second substrate facing the first substrate, and a display unit interposed between the first substrate and the second substrate.