Disclosed is a combination of host materials of a red light-emitting layer that can lower an operation voltage of an organic light-emitting diode, and improve light-emitting efficiency and lifetime thereof. In addition, disclosed is a charge scavenger which causes quenching with polaron to reduce triplet polaron quenching (TPQ) and roll-off occurring in the organic light-emitting diode. Further, disclosed is an organic light-emitting diode including the charge scavenger.

A semiconductor device includes: a resin substrate; a display element configured to generate an image; and a circuit layer including a thin film transistor configured to control the display element. The resin substrate has a main body made of resin and a surface layer made of the resin laminated on the main body. The surface layer has a lower electrification property than the main body or the surface layer has a lower film density than the main body. Each of the display element and the circuit layer is on the surface layer.

An embodiment of the present invention discloses an organic light emitting diode comprising an organic layer consisting of one layer or more, which includes a transparent electrode, a reflective electrode provided facing the transparent elector, and a light emitting layer provided between the transparent electrode and the reflective electrode. Here, the light emitting layer includes two or more light emitting materials and is characterized in that the difference between the dipole moment value of one light emitting material and the dipole moment value of another light emitting material from among the light emitting materials is 1.5 Debye or more.

A display apparatus includes: an organic light emitting diode (OLED) structure including in which at least one blue light-emitting unit and at least one green light-emitting unit are stacked to provide incident light in which the blue incident light and the green incident light are mixed; a first pixel, a second pixel, and a third pixel disposed on the OLED structure; color conversion layers disposed on at least two of the first, the second, or the third pixels, and including quantum dots for converting the mixed incident from the OLED structure into light of a predetermined color; and first, second, and third color filters disposed on the first, the second, and the third pixels, respectively, to absorb or block light of a predetermined wavelength band, wherein a conversion value of an area of a spectrum in a wavelength region of 380 nanometers to 780 nanometers of the green incident light with respect to a difference between a wavelength at the maximum transmittance of the second color filter and the medial wavelength of the incident green light (Δλ) may be 3.6 or greater and 13 or less.

The organic electroluminescent element prevents degradation of phosphorescent luminescent organic metal complexes in a light emitting layer, has a long life, and has superior color stability during continuously drive. The organic electroluminescent element has a blue light emitting layer with a phosphorescent light emitting organometallic complex (A) with a local maximum phosphorescent light emission wavelength on the short wave side of 480 nm or less, a phosphorescent light emitting organometallic complex (B), and a host compound. The content of complex (A) is greater than the content of the complex (B). The complex (A) and the host are such that a single layer made from complex (A) and the host compound, the value for the ratio ((D)/(C)) of the percent of remaining luminescence (C) which UV irradiation with a wavelength of 365 nm and the percent of remaining luminescence (D) with UV irradiation by a HgXe light source is 0.75-0.95.

Arrangements for phosphorescent blue emissive materials, layers, and devices are provided. The arrangements include a host having first a triplet energy level of at least 2.8 eV and an absolute difference of not more than 0.3 eV between the first singlet and triplet energy levels, and an emitter that includes an emissive transition metal complex and a first triplet energy level of at least 2.7 eV.

An organic EL device includes a first emitting layer and a second emitting layer. The first emitting layer contains a first host material and a first dopant material. The second emitting layer contains a second host material and a second dopant material. The first host material and the second host material are different from each other. The first dopant material is a compound having a maximum peak wavelength of 500 nm or less. The second dopant material is a compound having a maximum peak wavelength of 500 nm or less. The first dopant material and the second dopant material are different from each other. A triplet energy T.sub.1(H1) of the first host material and a triplet energy T.sub.1(H2) of the second host material satisfy a relationship of a numerical formula (Numerical Formula 1),

T.sub.1(H1)>T.sub.1(H2)   (Numerical Formula 1).

An organic semiconductor element with low driving voltage is provided. The organic semiconductor element includes a first electrode, a second electrode, and a hole-transport layer and an active layer between the first electrode and the second electrode. The hole-transport layer includes a first hole-transport layer and a second hole-transport layer. The first hole-transport layer is closer to the substrate than the second hole-transport layer is. The first hole-transport layer and the second hole-transport layer are in contact with each other. A value obtained by subtracting GSP_slope (mV/nm) of the second hole-transport layer from GSP_slope (mV/nm) of the first hole-transport layer is less than or equal to 10 (mV/nm). Note that GSP_slope (mV/nm) is a parameter represented by V/d when surface potential and thickness of a film are V (mV) and d (nm), respectively.

An organic light-emitting diode (OLED) display panel includes: a base substrate; one or more thin-film transistor (TFT) structures provided over the base substrate; a planarization layer provided over the TFT structures; anodes provided on an upper surface of the planarization layer; a pixel defining layer provided over the planarization layer defining a plurality of pixel regions, wherein each anode includes an upper surface being exposed in each of the pixel regions; an organic functional layer provided over the anodes; and a cathode provided over the organic functional layer; wherein a sheet resistance of the portion of the anodes that is proximal to the pixel defining layer is smaller than a sheet resistance of the portion of the anodes that is opposite from the pixel defining layer.

The present invention relates to a flexible organic EL device comprising, on one of the surfaces of an organic resin base, an inorganic protective layer, an organic EL light emitting part, a buffer layer, and a breakage-resistant layer in this order, wherein the buffer layer is a silicone or EPDM containing layer and an elastic modulus of the breakage-resistant layer at 5 to 35° C. is 100 MPa to 300 GPa.