A method for depositing a film on a substrate, which includes the steps of forming a film using a liquid composition that includes a neutral surfactant and a charged lamellar compound, placing the film in contact with the substrate and depositing the film on substrate. Also, a process for analyzing a substrate onto which a film has been deposited by the method.

The present disclosure discloses an electroluminescent diode and a display device. The electroluminescent diode includes a cathode, a luminescent layer, a hole transport layer and an anode. The hole transport layer has a hole injection control structure, the hole injection control structure includes a first hole conduction layer and a second hole conduction layer that are stacked, and a material of the second hole conduction layer is a material used in the first hole conduction layer that is P-type doped. The hole injection control structure may significantly improve the performance of hole injection in the electroluminescent diode, so as to balance a number of carriers in the electroluminescent diode, thereby effectively improving the luminescence performance and prolonging the service life thereof.

The present disclosure provides an electroluminescent display apparatus including a substrate including a first subpixel, a second subpixel, and a third subpixel, a first electrode in each of the first subpixel, the second subpixel, and the third subpixel on the substrate, a bank provided in a boundary between any two of the first subpixel, the second subpixel, and the third subpixel to cover an edge of the first electrode, a protection layer on the first electrode and the bank, a light emitting layer on the protection layer, and a second electrode on the light emitting layer.

A display apparatus includes a display area, a non-display area surrounding the display area, and a bending area formed in at least one side of the non-display area. The display apparatus includes a first glass substrate provided in the display area, a second glass substrate provided in the non-display area, an anti-etching member provided to overlap the bending area, and a link line portion formed on the anti-etching member and formed to overlap the non-display area.

An organic electroluminescence device includes an organic electroluminescence element, and a protective layer configured to protect the organic electroluminescence element, wherein the protective layer includes a first insulating film, a second insulating film, a third insulating film, a fourth insulating film, and a fifth insulating film, each of the first insulating film, the second insulating film, the third insulating film, the fourth insulating film, and the fifth insulating film is formed of an inorganic material, and a density of the first insulating film is lower than a density of each of the third insulating film and the fifth insulating film.

An encapsulation structure, an encapsulation method, an electroluminescent device, and display equipment, which relate to the technical field of displays. The encapsulation structure comprises: a first inorganic dielectric layer (1), wherein the first inorganic dielectric layer (1) has a surface attached to a surface of a cathode layer (4) of an electroluminescent device; a chromatic dispersion relationship between the first inorganic dielectric layer (1), the cathode layer (4) and an electron injection layer (5) of the electroluminescent device meets a preset condition; the preset condition is used for defining an optical parameter of a first interface, the optical parameter is related to chromatic dispersion, and the optical parameter is used for coupling surface plasmon polaritons on interfaces on both sides of the cathode layer (4); and the first interface is an interface between the first inorganic dielectric layer (1) and the cathode layer (4).

There is provided a photodetector element including a first electrode layer; a second electrode layer; a photoelectric conversion layer provided between the first electrode layer and the second electrode layer; an electron transport layer provided between the first electrode layer and the photoelectric conversion layer; and a hole transport layer provided between the photoelectric conversion layer and the second electrode layer, in which the photoelectric conversion layer contains an aggregate of semiconductor quantum dots that contain a metal atom and contains a ligand coordinated to the semiconductor quantum dot, the hole transport layer contains an organic semiconductor, and the second electrode layer is formed of a metal material containing at least one metal atom selected from Au, Pt, Ir, Pd, Cu, Pb, Sn, Zn, Ti, W, Mo, Ta, Ge, Ni, Cr, or In. There is also provided an image sensor including the photodetector element.

The present invention relates to an organic electroluminescent device, particularly to an organic light emitting diode (OLED) including an ETL stack of at least two electron transport layers, wherein the first electron transport layer comprises a first electron transport matrix compound and the second electron transport layer comprises second electron transport matrix compound and a redox n-dopant, and a device comprising the OLED.

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

A display panel is provided, including a substrate and an organic light-emitting component disposed on the substrate. The display panel further includes a planarization layer and an insulation layer disposed on the planarization layer. An anode of the organic light-emitting component is disposed on the planarization layer. The insulation layer is disposed on the planarization layer and configured to cover the planarization layer, and the anode of the organic light-emitting component is exposed through the insulation layer.