Patent classifications
H10N15/00
Thermoelectric conversion element
A thermoelectric conversion element that has a power generation layer containing an iron-aluminum based magnetic alloy material containing equal to or more than 70 weight percent of iron and aluminum in total. The power generation layer generates an electromotive force, due to an anomalous Nernst effect that develops in the magnetic alloy material in response to a temperature gradient applied thereto, in a direction intersecting both the magnetization direction of the magnetic alloy material and the direction of the applied temperature gradient.
Infrared sensor, infrared sensor array, and method of manufacturing infrared sensor
An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.
Electric Power Generator Containing An Active Organic Material
The present invention relates to an electric power generator and a power generator module containing an active organic material.
Optical sensor
An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 m or more.
Etching method
A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.
Thermoelectric conversion element and thermoelectric conversion device having the same
To increase thermoelectromotive voltage of a thermoelectric conversion element with a magnetization direction, a temperature gradient direction, and an electromotive force direction orthogonal to each other. A thermoelectric conversion element 1 is formed by annularly winding a thermoelectric material which is radially magnetized and circumferentially generates an electromotive force in accordance with a temperature gradient in the axial direction thereof. Thus, the thermoelectric material is wound not linearly but annularly, so that a connection line for connecting a plurality of thermoelectric materials is not necessary. In particular, when the thermoelectric material is wound in a plurality of turns, the length per unit area of the thermoelectric material in the direction of the electromotive force can be significantly increased, making it possible to significantly increase thermoelectromotive voltage while suppressing increase in the size of the element.
Thermoelectric conversion structure and method for making the same
A thermoelectric conversion structure according to an exemplary aspect of the invention includes a thermoelectric conversion unit structure including a magnetic fine particle including a magnetic material with the spin Seebeck effect arising and an electromotive body with which to cover the magnetic fine particle, wherein a plurality of the thermoelectric conversion unit structures form an aggregate with the electromotive body connecting to each other.
Plasma assisted doping on germanium
A method for forming a junction in a germanium (Ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes performing a plasma pretreatment on the substrate in the processing chamber for a predetermined pretreatment period using a pretreatment plasma gas mixture including hydrogen gas species. The method includes supplying a doping plasma gas mixture to the processing chamber including a phosphorous (P) gas species and an antimony (Sb) gas species. The method includes striking plasma in the processing chamber for a predetermined doping period. The method includes annealing the substrate during a predetermined annealing period to form the junction in the germanium (Ge) layer.
THERMOELECTRIC DEVICE
A thermoelectric device includes: a sheet-like or plate-like thermoelectric conversion film including a thermoelectric conversion element formed with a material exhibiting an anomalous Nernst effect; and a catalyst portion formed with a catalyst that reacts with a fluid the catalyst portion being on the side of at least a first surface of the thermoelectric conversion film and facing a flow path of the fluid.
THERMOELECTRIC DEVICE
A thermoelectric device includes: a sheet-like or plate-like thermoelectric conversion film including a thermoelectric conversion element formed with a material exhibiting an anomalous Nernst effect; and a catalyst portion formed with a catalyst that reacts with a fluid the catalyst portion being on the side of at least a first surface of the thermoelectric conversion film and facing a flow path of the fluid.