A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

A thermoelectric conversion element includes: a magnetic body having a magnetization; and an electromotive body formed of material exhibiting a spin orbit coupling and jointed to the magnetic body. The magnetic body has an upper joint surface jointed to the electromotive body. The upper joint surface has concavities and convexities.

The object of the present invention is to provide a thermal power generation battery with excellent battery characteristics. The above problem can be solved by a thermal power generation element that does not require a temperature gradient, wherein a first part comprising a semiconductor which produce thermally excited electron and hole, a second part comprising an electrolyte in which an charge transport ion pair can be moved therein, and a third part comprising a substance that is an electrode, are in contact with each other in this order, and wherein a valance band potential of the semiconductor of the first part is positive with respect to a redox potential of a charge transport ion pair; and an ion which is more susceptible to oxidation among the two ions is oxidized at an interface between the first part and the second part; and an ion which is more susceptible to reduction among the two ions is reduced at an interface between the third part and the second part; and wherein the thermal power generation element satisfies the following formula (I): L/IDT=1-20 (I) wherein L is a shortest distance between the first part and the third part, and IDT is ion diffusion thickness.

The object of the present invention is to provide a thermal power generation battery with excellent battery characteristics. The above problem can be solved by a thermal power generation element that does not require a temperature gradient, wherein a first part comprising a semiconductor which produce thermally excited electron and hole, a second part comprising an electrolyte in which an charge transport ion pair can be moved therein, and a third part comprising a substance that is an electrode, are in contact with each other in this order, and wherein a valance band potential of the semiconductor of the first part is positive with respect to a redox potential of a charge transport ion pair; and an ion which is more susceptible to oxidation among the two ions is oxidized at an interface between the first part and the second part; and an ion which is more susceptible to reduction among the two ions is reduced at an interface between the third part and the second part; and wherein the thermal power generation element satisfies the following formula (I): L/IDT=1-20 (I) wherein L is a shortest distance between the first part and the third part, and IDT is ion diffusion thickness.

A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

The present disclosure relates to a solar additive composition comprising at least an inorganic solid material comprising particles and an organic solvent, wherein the additive may be added to a water-based acrylic paint providing high solar absorption property to the acrylic paint, wherein the acrylic paint with solar additive may absorb solar energy and convert the solar energy into electricity.

A method, in accordance with one embodiment, includes forming an array of structures from a raw material via cold spray. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of the raw material, and essentially the same functional properties as the raw material. A method, in accordance with another embodiment, includes positioning a mask between a cold spray nozzle and a substrate, and forming a structure on the substrate by cold spraying a raw material from the cold spray nozzle. The structure has a shape corresponding to an aperture in the mask.

A method, in accordance with one embodiment, includes forming an array of structures from a raw material via cold spray. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of the raw material, and essentially the same functional properties as the raw material. A method, in accordance with another embodiment, includes positioning a mask between a cold spray nozzle and a substrate, and forming a structure on the substrate by cold spraying a raw material from the cold spray nozzle. The structure has a shape corresponding to an aperture in the mask.

In order to further improve the spin-current/electric-current conversion efficiency in a spin-current thermoelectric conversion element, a thermoelectric conversion element includes a magnetic material layer having in-plane magnetization; and an electromotive material layer magnetically coupled with the magnetic material layer. The electromotive material layer includes a first conductor with a spin orbit coupling arising, and a second conductor having lower electric conductivity than electric conductivity of the first conductor.

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.