The disclosed subject matter relates to techniques, laminates and devices used to fabricate thin dielectric or semiconductor membranes including a handling substrate including a photoresist material on a first surface thereof, a semiconductor wafer having a circuit pattern on a first surface and a second surface to be processed and a temporary adhesive layer temporarily bonding the first surface of the semiconductor wafer to the first surface of the handling substrate including the photoresist material.

An object of the present invention is to provide a stable thermoelectric battery. The object can be solved by a thermoelectric battery comprising a working electrode containing a n-type silicon and germanium, a counter electrode, and a solid electrolyte having a polymer having a specific repeating unit with a molecular weight of 200 to 1,000,000, or a derivative thereof, wherein the solid electrolyte contains copper ions or iron ions as an ion source.

Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.

Methods and systems for sending multicast messages are disclosed. A multicast message is received to be transmitted to a plurality of access terminals at a radio access network (RAN), the received multicast message having a first format. The first format may correspond to a conventional multicast message format. The RAN determines whether the received multicast message requires special handling. If the RAN determines the received multicast message requires special handling, the radio access network converts the received multicast message from the first format into a second format. The RAN transmits the converted multicast message with the second format (e.g., a data over signaling (DOS) message) on a control channel to at least one of the plurality of access terminals. The access terminals receiving the converted multicast message interpret the message as a multicast message.

Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.

This invention describes a thermoelectric energy generation device based on the ExB drift in a semiconductor. The material is in depletion mode to avoid cancellation of the electric field by space charges. Under ideal, infinite mobility, zero-collision conditions, electrons and holes drift in the same direction, perpendicularly to the electric and magnetic fields, resulting in a zero-output current. However, when mobility is finite, their differing properties such as mobility, effective mass, and charge, manifest themselves as different drift velocity and drift direction resulting in a net output current and power. This invention leverages carriers' properties to accentuate these differences and maximize the output power. Quantities being optimized include, mobility, the product of mobility and the magnetic field, positioning electrodes along the drift axis of the overriding carriers, and adjusting the thickness of the semiconductor layer to accommodate the cycloid motion of one type of carrier but not the other.

A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode.

The present invention provides a conversion material including a first phase providing a matrix and a second phase comprising a nanoscale or microscale material providing electron mobility. The conversion material converts heat from a single macroscopic reservoir into voltage.

A quantum Hall system can be used for extremely efficient thermoelectric cooling and power generation. Such a quantum Hall system can be implemented as a two-dimensional (2D) material that is subject to a quantizing magnetic field and whose opposite ends are electrically and thermally coupled to a heat sink and heat source, respectively. The edges of the 2D material connecting those opposite ends are coupled to respective ohmic contacts. The massive degeneracy and the metallicity of a partially-filled Landau level in the quantum Hall system enable thermoelectric energy conversion with unprecedented efficiency at low temperature. This efficiency occurs because the thermoelectric figure of merit is constant for a transverse thermoelectric device using the =0 quantum Hall state of Dirac materials at charge neutrality. Under these conditions, electron-hole symmetry causes the electrical Hall effect to vanish and the thermoelectric Hall effect to peak.

This invention describes a thermoelectric energy generation device based on the ExB drift in a semiconductor. The material is in depletion mode to avoid cancellation of the electric field by space charges. Under ideal, infinite mobility, zero-collision conditions, electrons and holes drift in the same direction, perpendicularly to the electric and magnetic fields, resulting in a zero-output current. However, when mobility is finite, their differing properties such as mobility, effective mass, and charge, manifest themselves as different drift velocity and drift direction resulting in a net output current and power. This invention leverages carriers' properties to accentuate these differences and maximize the output power. Quantities being optimized include, mobility, the product of mobility and the magnetic field, positioning electrodes along the drift axis of the overriding carriers, and adjusting the thickness of the semiconductor layer to accommodate the cycloid motion of one type of carrier but not the other.