An artificial tongue is provided. The artificial tongue includes tongue tissue formed by a bioprinting process, an antenna embedded within the tongue tissue and configured to wirelessly receive power from an external device, a processor embedded within the tongue tissue and operatively coupled to the antenna, and a piezoelectric element embedded within the tongue tissue and operatively coupled to the processor. The piezoelectric element is configured to deform in response to an applied electric bias, and the processor is configured to cause the electric bias to be applied to the piezoelectric element based on the power received by the antenna.

The present disclosure relates to circuitry for driving a piezoelectric transducer based on an input signal. The circuitry comprises: primary driver circuitry configured to receive the input signal and to output a primary driving signal to the piezoelectric transducer based on the input signal; and secondary driver circuitry configured to receive an error signal indicative of an error between the input signal and the primary driving signal and to output a secondary driving signal to the piezoelectric transducer based on the error signal, wherein the primary driver circuitry and the secondary driver circuitry both comprise switching converter circuitry.

Micromachined ultrasonic transducer (MUT) arrays capable of multiple resonant modes and techniques for operating them are described, for example to achieve both high frequency and low frequency operation in a same device. In embodiments, various sizes of piezoelectric membranes are fabricated for tuning resonance frequency across the membranes. The variously sized piezoelectric membranes are gradually transitioned across a length of the substrate to mitigate destructive interference between membranes oscillating in different modes and frequencies.

A method for manufacturing a piezoelectric film deposition substrate (100) according to this present invention includes forming a piezoelectric film (3) on or above the lower electrode (2) with the mask (5) being attached on or above the lower electrode; forming an upper electrode (4) on the piezoelectric film with the mask being attached on or above the lower electrode; forming a the lower-electrode-exposed part (2a) by detaching the mask from the lower electrode; and subjecting the piezoelectric film to polarization by applying a voltage between the lower-electrode-exposed part and the upper electrode.

An object is to provide a piezoelectric film that has excellent flexibility in a high temperature environment at higher than 50° C. and exhibits good flexibility even at room temperature, a laminated piezoelectric element in which the piezoelectric films are laminated, and an electroacoustic transducer using the piezoelectric film or the laminated piezoelectric element. The object is solved by the piezoelectric film including: a polymer-based piezoelectric composite material in which piezoelectric particles are dispersed in a matrix including a polymer material; and electrode layers provided on both surfaces of the polymer-based piezoelectric composite material, in which a loss tangent at a frequency of 1 Hz according to dynamic viscoelasticity measurement has a maximal value of greater than or equal to 0.1 existing in a temperature range of higher than 50° C. and lower than or equal to 150° C., and has a value of greater than or equal to 0.08 at 50° C.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

A cooling system and method for using the cooling system are described. The cooling system includes an array of cooling elements and a controller. The array of cooling elements corresponds to regions of the heat-generating structure where heat is generated in response to operation of the semiconductor. The controller is configured to activate portions of the array of cooling elements based on a determination that operation of the heat-generating structure is likely to generate heat in a given region of the heat-generating structure.

A cooling system and method for using the cooling system are described. The cooling system includes an array of cooling elements and a controller. The array of cooling elements corresponds to regions of the heat-generating structure where heat is generated in response to operation of the semiconductor. The controller is configured to activate portions of the array of cooling elements based on a determination that operation of the heat-generating structure is likely to generate heat in a given region of the heat-generating structure.

A piezoelectric device that includes a film that has a first main surface and a second main surface, and has piezoelectricity; a first substrate; and a first connection member that connects the film to the first substrate. The first connection member is a thermosetting resin, and a curing temperature of the first connection member is lower than a temperature at which the film thermally contracts.

A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.