A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.

An actuator device for bidirectional adjustment of an adjusting body constructed for interaction with an adjustment partner and preferably realized as a tappet (14), having first adjustment means (10), which have expansion means having a magnetically effective shape-memory alloy material (12) and exerting an adjustment force, particularly a pushing force, on the adjusting body for moving the same along a first adjustment direction, which carry out an expansion generating the adjustment force as a reaction to a first energizing of first coil means (16), and second adjustment means (20; 20′, 34) assigned to the adjusting body and provided separately from the expansion means and the first coil unit, which are constructed for moving the adjusting body in a second adjustment direction opposite to the first adjustment direction, characterized in that the second adjustment means have an electromagnetically or electromotively driven actuator and therefore for moving the adjusting body in the second adjustment direction construct a drive, which can be activated as a reaction to signal loading, particularly a second electrical energizing.

Described is an interconnect which comprises: a first end having a ferromagnetic layer coupled to a first magnetoelectric material layer; and a second end having a second magnetoelectric material layer coupled to the ferromagnetic layer, wherein the ferromagnetic layer extends from the first end to the second end. Described is a majority gate device which comprises: a ferromagnetic layer; and first, second, third, and fourth magnetoelectric material layers coupled to the ferromagnetic layer. Described is an apparatus which comprises: a first end having a ferromagnetic layer coupled to a first magnetoelectric material layer; and a second end having a tunnel junction device coupled to the ferromagnetic layer. Described is an apparatus which comprises: a first terminal coupled to a tunneling junction device; a second terminal coupled to a layer coupling the tunneling junction device and a magnetoelectric device; and a third terminal coupled to the magnetoelectric device.

An energy harvester includes a housing including an inner space holed in a lengthwise direction, a first magnet portion disposed at a center portion of the inner space of the housing, a second magnet portion spaced apart from the first magnet portion in the inner space, the second magnet portion including a first surface having a magnetic repulsive force with the first magnet portion, and a power generating device part disposed on a second surface of the second magnet portion and configured to generate electrical energy based on deformation thereof.

A method of fabricating a shape-changeable magnetic member comprising a plurality of segments with each segment being able to be magnetized with a desired magnitude and orientation of magnetization, to a method of producing a shape changeable magnetic member composed of a plurality of segments and to a shape changeable magnetic member.

A stator or a rotor for use in an electrical machine comprises a composite element having a rigid mass suitable for including at least one magnetostrictive electrode bar, at least one magnetostrictive electrode bar, and a piezoelectric material in between the rigid mass material and the magnetostrictive electrode bars. The rigid mass, the magnetostrictive electrode bars and the piezoelectric material are arranged such that applying a voltage between the rigid mass and one or more magnetostrictive electrodes, causes piezoelectric effects in the piezoelectric material inducing stress in the bi-axial plane of the at least one magnetostrictive bar and an altered permeability of the at least one magnetostrictive bar in a direction perpendicular to the bi-axial stress plane.

The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations. The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of Fe—Ga alloy by using electric discharge machining in a state that <100>orientation of the crystal of the Fe—Ga alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

A nanometer-scale precision actuator comprises a base, an intermediate structure, an output interface, and two linear elements producing a controllable extension in the same longitudinal direction, each between a first and a second end. A first of the two elements has a first end fixed onto the intermediate structure and a second end fixed onto the base, a second of the two elements has a first end fixed onto the intermediate structure and a second end fixed to the output interface. The base and the intermediate structure are positioned in such a manner that the controllable extension of the second element produces a displacement of the actuator in a first direction and the controllable extension of the first element produces a displacement of the actuator in a second direction, opposite to the first direction, with respect to the base.

Exemplary practice of the present invention provides a magnetostrictive actuator characterized by linear force output and uniform magnetic biasing. A center bias magnet drives flux through series magnetostrictive bars in opposite directions while surrounding drive coils apply flux in the same direction through the bars. The net response is substantially linear with respect to the drive coil current. A second parallel set of magnetostrictive bars completes the flux path and adds to the actuator output force. Flux leakage between the parallel bars is compensated by a ferromagnetic shunt or by a tapered magnet providing uniform flux density down the length of the magnetostrictive bars. The closed flux path allows magnetic shielding of the entire actuator, if desired.

A gripper device (16; 30; 56; 90; 120) which is designed so as to be movable along a movement path, and which serves for grasping and holding a workpiece (70) and for moving the workpiece along the movement path, with at least one first contact section (18; 38; 66) which, to produce an operative pairing with the workpiece that effects the gripping or holding action, can be driven relative to a second contact section (20; 40; 68), which first contact section is assigned actuator means (22; 44; 54; 128), which are designed to exert a drive force in reaction to the application of a magnetic field, and which are composed of a magnetic shape-memory alloy material, wherein the actuator means for magnetic interaction are formed, for the application of a magnetic field, with magnetic field generating means that are static at one position of the movement path (52; 80; 86; 88), and/or with magnetic field generating means that are provided so as to be movable independently of the gripper device.