A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

A piezoelectric sensor, a manufacturing method thereof and an electronic device are provided. The piezoelectric sensor includes a substrate, an active layer, the active layer being disposed at a side of the substrate: a first electrode, the first electrode being disposed at a side of the active laver a wav from the substrate, and the first electrode including a plurality of sub-electrodes disposed at intervals: a piezoelectric layer, the piezoelectric layer being disposed at a side of the first electrode away from the active layer; and a second electrode, the second electrode being disposed at a side of the piezoelectric layer away from the first electrode. The active layer is configured to be capable of switching between an insulating state and a conducting state, and in the conducting state the active layer is capable of conducting the plurality of sub-electrodes.

Disclosed herein is a photoelectric sensor, display panel and their manufacturing method. The photoelectric sensor may comprise a photodeformable unit and a piezoelectric unit in contact with the photodeformable unit.

A topological spin memory effect, defined as the recovery of magnetic skyrmions or magnetic bubble skyrmions in magnetic thin films after a transition to a dramatically different spin texture, is used for encrypted non-volatile information storage. The storage strategy is based on magnetic skyrmions, that is, topologically protected spin textures comprising chiral domain walls surrounding small (e.g., nanometers to microns in diameter), typically circular, single-domain cores. Systems and methods are described for encrypted non-volatile information storage based on a spin memory effect in magnetic thin films that support skyrmions. Systems and methods encrypt and recover information stored in the form of magnetic skyrmions.

A sensor device comprising at least a first substrate, a capacitive sensor for recording the approach of an object, a piezoelectric sensor for recording a pressure, wherein the capacitive sensor is arranged on a first side of the first substrate and the piezoelectric sensor is arranged on a second side of the first substrate, wherein the second side is opposite the first side, or wherein the capacitive sensor and the piezoelectric sensor are arranged on the same side of the substrate.

An organic film is patterned without applying a hard mask or photolithography. A hydrophilic solvent-soluble resist is placed and arranged on the organic film using a non-lithography process. The hydrophilic solvent-soluble resist is placed and arranged using a printing or lamination process. The organic film is patterned using a wet etchant that is selective to the organic film but non-selective to the hydrophilic solvent-soluble resist. The hydrophilic solvent-soluble resist protects the underlying organic film from contamination and damage, prevents undercutting, and assists in providing a desired taper profile during patterning.

An integrated structure of a crystal resonator and a control circuit (110) and an integrated method therefor. Integration of the crystal resonator with the control circuit (110) is accomplished by forming, in a device wafer (100) containing the control circuit, a lower cavity (120) with an opening exposed at a back side of the device wafer (100), forming a piezoelectric vibrator (500) on the back side of the device wafer (100) and electrically connecting the piezoelectric vibrator (500) to the control circuit (110) in the device wafer (100) from the back side of the device wafer (100). The crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration.

An integrated structure of a crystal resonator with a control circuit and an integration method therefor. The crystal resonator is formed by first forming a lower cavity (120) in a device wafer (100) in which a control circuit is formed, forming a piezoelectric vibrator (200) on the device wafer (100) and then enclosing the piezoelectric vibrator (200) within an upper cavity (400) through forming a cap layer (420) using a planar fabrication process, The crystal resonator according to the present invention has a smaller size, which is help for reducing the power consumption thereof, and the crystal resonator is more easily integrated with other semiconductor components, thereby improving the integration of the device.

An actuator device has an electroactive polymer actuator and an integrated piezoelectric transformer. At least a secondary side of the integrated piezoelectric transformer shares a piezoelectric electroactive polymer layer with the electroactive polymer actuator, so that lower external voltages can be applied to the actuator device. A diode is connected between the secondary side of the integrated piezoelectric transformer and the electroactive polymer actuator.

A display device includes a display panel, and a plurality of piezoelectric elements arranged on one surface of the display panel, wherein each of the plurality of piezoelectric elements includes a pressure sensor configured to detect pressure applied to a surface opposite to the one surface of the display panel, and a haptic device configured to generate vibration according to a driving voltage.