Patent classifications
H10N39/00
INTEGRATED PIEZORESISTIVE AND PIEZOELECTRIC FUSION FORCE SENSOR
Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
DISPLAY APPARATUS
A display apparatus includes a display panel configured to display an image and a sound generating device on a rear surface of the display panel. The sound generating device is configured to vibrate the display panel to generate sound. The sound generating device includes a first structure and a first passivation layer on one side of the first structure, at least a portion of the first passivation layer having a non-flat shape.
Force transducer for electronic devices
A force transducer for an electronic device can be operated in a drive mode and a sense mode simultaneously. In particular, the force transducer can provide haptic output while simultaneously receiving force input from a user. The force transducer is primarily defined by a monolithic piezoelectric body, a ground electrode, a drive electrode, and a sense electrode. The ground electrode and the drive electrode each include multiple electrically-electrically conductive sheets that extend into the monolithic body; the electrically conductive sheets of the ground electrode and the drive electrode are interdigitally engaged. The sense electrode of the force transducer is typically disposed on an exterior surface of the monolithic body.
Display device
A display device includes a touch panel; a display panel under the touch panel and displaying an image; a piezoelectric element under the touch panel and including an upper electrode, a lower electrode and a piezoelectric layer; and a rectifying circuit connected to the piezoelectric element.
DISPLAY DEVICE, METHOD FOR PRODUCING DISPLAY DEVICE, AND GESTURE RECOGNITION METHOD
A display device, a method for producing a display device, and a gesture recognition method are disclosed. The display device includes a display module including a base and an array substrate, a resin layer, a first electrode layer, a pixel definition layer, a light-emitting unit layer, a second electrode layer disposed opposite to the first electrode layer, and an encapsulation layer. The light-emitting unit layer is between the first electrode layer and the second electrode layer and includes a plurality of light-emitting units respectively in a plurality of openings of the pixel definition layer, and an ultrasonic sensor including the second electrode layer, a piezoelectric material layer between the first electrode layer and the pixel definition layer, and a third electrode layer between the pixel definition layer and the resin layer. The piezoelectric material layer includes a plurality of piezoelectric material units separated by the plurality of light-emitting units.
Array substrate and display panel having force TFT
A method for fabricating an array substrate, a display panel, and a display device is provided. The array substrate is divided into a plurality of pixel regions, and each of the pixel regions is provided with a pixel thin film transistor (TFT). At least one of the pixel regions is provided with a pressure component and a force TFT, the force TFT includes a first electrode, a second electrode and a control electrode, and the pressure component is connected to one of the first electrode and the control electrode of the force TFT. At least one of layer structures of the pixel TFT is disposed in the same layer as a corresponding layer structure of the force TFT.
Photoelectric sensor, display panel and manufacturing method thereof
Disclosed herein is a photoelectric sensor, display panel and their manufacturing method. The photoelectric sensor may comprise a photodeformable unit and a piezoelectric unit in contact with the photodeformable unit.
Display substrate and display device
The present disclosure provides a display substrate and a display device. The display substrate comprises a base, a plurality of display units arranged on the base, a signal line and a control unit, wherein the signal line is configured to connect adjacent two display units of the plurality of display units; at least a part of the signal line is made of a shape memory material, and the part is deformed to different degrees under different excitation conditions; the control unit is configured to detect deformation of the base and apply a corresponding excitation condition to the signal line according to the deformation of the base, so that the signal line is in a deformation state adaptive to the deformation of the base.
METHOD OF INCREASING ULTRASONIC SIGNAL RECEPTION
A transceiver apparatus for maximizing voltage. A voltage booster or transformer is implemented using piezoelectric thin films in substrates, preferably CMOS substrates where active processing of RF signals can lead to highly integrated and inexpensive ICs. The voltage gain is achieved by cascading multiple transducers, formed in the same piezoelectric thin film, or films cascaded in series on top of each other. An array of transducers are connected in parallel or series, connected to the input or output port electrodes. Other approaches include placing the receive transformer in a location where the diffracting field from the transmitter transducer is incident on the receive transducer generating a higher ultrasonic field at the receive transformer and increasing the voltage is to connect an array of transducers, formed in the same layer, or different layers of piezoelectric layer in parallel in drive mode when the pulse is transmitted.
Hafnium-zirconium oxide (HZO) ferroelectric transducer and method of making the same
A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators.