H10N39/00

Piezoelectric actuator, ultrasonic element, ultrasonic probe, ultrasonic device, and electronic device

A piezoelectric actuator includes: a vibrating plate including a first surface configured to close an opening provided in a substrate and also including a second surface including a plurality of piezoelectric elements; a suppressing portion configured to suppress vibration of the vibrating plate; and a plurality of walls sticking out into the opening from the first surface, in which, when an active portion of a piezoelectric element is set as a portion where a first electrode, a piezoelectric layer, and a second electrode overlap, the walls are provided between adjacent active portions in plan view from a direction in which the first electrode, the piezoelectric layer, and the second electrode are stacked, and a distance between adjacent walls is longer than a distance between adjacent active portions in a plane perpendicular to the stacking direction.

Microfluidic device for continuous ejection of fluids, in particular for ink printing, and related manufacturing process

A microfluidic device for continuous ejection of fluids includes: a semiconductor body that laterally delimits chambers; an intermediate structure which forms membranes each delimiting a top of a corresponding chamber; and a nozzle body which overlies the intermediate structure. The device includes, for each chamber: a corresponding piezoelectric actuator; a supply channel which traverses the intermediate structure and communicates with the chamber; and a nozzle which traverses the nozzle body and communicates with the supply channel. Each actuator is configured to operate i) in a resting condition such that the pressure of a fluid within the corresponding chamber causes the fluid to pass through the supply channel and become ejected from the nozzle as a continuous stream, and ii) in an active condition, where it causes a deformation of the corresponding membrane and a consequent variation of the pressure of the fluid, causing a temporary interruption of the continuous stream.

Ionic polymer compositions

A dielectric polymeric composition comprising a polymeric matrix comprising structural units derived from a polymerizable vinyl monomer; an ionic liquid comprising an organic cation and a balancing anion, wherein the ionic liquid is miscible or partially miscible with the polymerizable vinyl monomer, and wherein the concentration of ionic liquid in dielectric polymeric composition ranges from 0.5 to 30 wt. %; and less than 10 ppm of unreacted polymerizable vinyl monomer, based on the total weight of the composition, wherein an amount of unreacted polymerizable vinyl monomer in the composition is measured via HPLC. The polymeric matrix further comprises structural units derived from a polymerizable co-monomer comprising a functional group that has the ability to form hydrogen bonds within the polymeric matrix. The polymeric matrix further comprises a crosslinking agent, and wherein the polymeric matrix comprises covalent crosslinks between the crosslinking agent and the structural units derived from the polymerizable vinyl monomer.

Electroactive polymer actuator device and driving method

An actuator device has an electroactive polymer actuator (35) and an integrated piezoelectric transformer (30) whose primary side (32) and secondary side (34) are formed from different electroactive polymer materials. At least the secondary side (34) of the transformer shares a piezoelectric electroactive polymer layer (36) with the electroactive polymer actuator, so that lower external voltages can be applied to the device.

ULTRASONIC SENSOR, METHOD FOR PREPARING ULTRASONIC SENSOR, AND DISPLAY APPARATUS

An ultrasonic sensor, a preparation method of the ultrasonic sensor, and a display apparatus are provided. The ultrasonic sensor includes a texture recognition region and a contrast region. The contrast region is located on at least one side of the texture recognition region. The texture recognition region includes at least one recognizing unit, and the contrast region includes at least one contrast unit. The at least one recognizing unit includes a first dielectric material layer, and the at least one contrast unit includes a second dielectric material layer. The first dielectric material layer and the second dielectric material layer are made of a same material. The first dielectric material layer exhibits piezoelectric properties. A piezoelectric strain constant of the first dielectric material layer is greater than a piezoelectric strain constant of the second dielectric material layer.

Ultrasonic device, ultrasonic module, and ultrasonic measuring apparatus

An ultrasonic device includes: a substrate provided with a first opening and a second opening; a support film that is provided on the substrate and blocks the first opening and the second opening; a transmitting piezoelectric film that is provided on the support film at a position which overlaps the first opening when viewed in a thickness direction of the substrate and is interposed between a pair of electrodes in the thickness direction of the substrate; and a receiving piezoelectric film that is provided on the support film at a position which overlaps the second opening when viewed in the thickness direction of the substrate and is interposed between a pair of electrodes in the thickness direction of the substrate. In the thickness direction of the substrate, a thickness dimension of the transmitting piezoelectric film is smaller than a thickness dimension of the receiving piezoelectric film.

Piezoelectric film, piezoelectric module, and method of manufacturing piezoelectric film

A piezoelectric film includes a substrate having flexibility, and at least two piezoelectric elements provided to the substrate so as to be arranged at intervals of a first dimension along a first direction, the piezoelectric elements are each configured by stacking a first electrode film, a piezoelectric film made of an inorganic material, and a second electrode film along a thickness direction of the substrate, and an area between the piezoelectric elements adjacent to each other along the first direction forms a vibrational region which can be displaced in the thickness direction.

Ultrasonic sensor and electronic device

An ultrasonic sensor includes an element substrate having a first and a second surface at an opposite side of the first surface, including an opening section piercing through the element substrate in a Z direction from the first to second surface, a vibrating plate on the first surface of the element substrate to close the opening section, a plurality of vibration regions extending along an X direction orthogonal to the Z direction on the vibration plate in positions overlapping the opening section, and a plurality of piezoelectric elements to correspond to the plurality of vibration regions of the vibration plate. The opening section includes, on the first surface, a first and second side parallel to the X direction and a third and fourth side coupling end portions in the X direction of the first and second sides at an acute or obtuse angle to the first and the second side.

Semiconductor device comprising passive magnetoelectric transducer structure

A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

Phononic bus for coherent interfaces between a superconducting quantum processor, spin memory, and photonic quantum networks

A hybrid quantum system performs high-fidelity quantum state transduction between a superconducting (SC) microwave qubit and the ground state spin system of a solid-state artificial atom. This transduction is mediated via an acoustic bus connected by piezoelectric transducers to the SC microwave qubit. For SC circuit qubits and diamond silicon vacancy centers in an optimized phononic cavity, the system can achieve quantum state transduction with fidelity exceeding 99% at a MHz-scale bandwidth. By combining the complementary strengths of SC circuit quantum computing and artificial atoms, the hybrid quantum system provides high-fidelity qubit gates with long-lived quantum memory, high-fidelity measurement, large qubit number, reconfigurable qubit connectivity, and high-fidelity state and gate teleportation through optical quantum networks.