Described is an apparatus which comprises: a magnetic tunneling junction (MTJ) having a free magnetic layer; a piezoelectric layer; and a conducting strain transfer layer coupled to the free magnetic layer and the piezoelectric layer. Described is a method, which comprises: exciting a piezoelectric layer with a voltage driven capacitive stimulus; and writing to a MTJ coupled to the piezoelectric layer via a strain assist layer. Described is also an apparatus which comprises: a transistor; a conductive strain transfer layer coupled to the transistor; and a MTJ device having a free magnetic layer coupled to the conductive strain transfer layer.

A semiconductor module and a method for manufacturing the same are provided. The semiconductor module includes a substrate comprising a front side and at least one semiconductor device formed on the front side, a shielding structure formed on the at least one semiconductor device, and a piezoelectric layer formed on the shielding structure.

Ferroelectric components, such as the ferroelectric field effect transistors (FeFETs), ferroelectric capacitors and ferroelectric diodes described above may be operated as multi-level memory cells as described by the present invention. Storing multiple bits of information in each multi-level memory cell may be performed by a controller coupled to an array of the ferroelectric components configured as ferroelectric memory cells. The controller may execute the steps of receiving a bit pattern for writing to a multi-level memory cell comprising a ferroelectric layer; selecting a pulse duration for applying a write pulse to the memory cell based, at least in part, on the received bit pattern; and applying at least one write pulse to the memory cell having the selected pulse duration, in which the at least one write pulse creates a remnant polarization within the ferroelectric layer that is representative of the received bit pattern.

An array of piezoelectric micromachined ultrasonic transducers (PMUTs) includes a first piezoelectric layer and a second piezoelectric layer, a dielectric layer positioned between the first piezoelectric layer and the second piezoelectric layer, and a plurality of conductive layers positioned on opposing surfaces of the first piezoelectric layer and opposing surfaces of the second piezoelectric layer. A plurality of isolation trenches extend through the dielectric layer and at least a portion of conductive layers of the plurality of conductive layers, where the plurality of isolation trenches are positioned between neighboring PMUTs of the array of PMUTs such that the neighboring PMUTs are electrically isolated, and wherein the plurality of isolation trenches relieve stress in the dielectric layer.

Actuator device has a main body with base and superstructure bodies, the device having a plurality of actuators formed from a piezoelectric or electrostrictive material and each extend from the base body and form the superstructure body. The actuators each have at least two inner actuating electrodes of which at least one first inner actuating electrode extends, in a positive depthwise direction from the front side up to a distance from the rear side, and of which at least one second inner actuating electrode extends in a negative depthwise direction from the rear side up to a distance from the front side. At least one first inner actuating electrode of each actuator is provided for electrical connection to a first connection pole of an actuating device, a rear-side layer which is formed from electrically conductive material arranged on the rear side of the actuator device.

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

Embodiments of the present disclosure provide a flexible acoustic-electric substrate and a preparation method thereof, and a flexible acoustic-electric device. The preparation method of a flexible acoustic-electric substrate includes: forming a flexible substrate; forming a plurality of piezoelectric components on the flexible substrate; and forming a plurality of chambers on the flexible substrate in a one-to-one correspondence relationship with the plurality of piezoelectric components, and the plurality of chambers are located on a side of the flexible substrate away from the plurality of piezoelectric components.

The present invention relates to a process of fabricating P(VDF-TrFE) films by modifying the solvent composition. Two solvents MEK and DMSO were mixed in pre-determined ratios and that co-solvent mixture was used for fabricating the P(VDF-TrFE) films. By virtue of such method driven P(VDF-TrFE) films, the ferroelectric capacitors comprising of the same were found to achieve low voltage operation, thermal stability and fatigue endurance, which indicated improved ferroelectric performance of the devices. In addition, the films made by same process also yielded high piezo- and pyro-electric coefficient, indicating improved piezo- and pyro-electric performances of the devices.

An electronic device includes: a first substrate having a first surface and a second surface opposite from the first surface; a second substrate facing the first surface; driven elements provided at the second substrate; a drive circuit facing the second surface; a first interconnect provided at the first surface; a second interconnect provided at the second surface; a through-substrate interconnection part penetrating the first substrate in a thickness direction thereof; a first bump part; and a second bump part. The drive circuit is capable of outputting drive signals for driving the driven elements. The through-substrate interconnection part electrically connects the first interconnect and the second interconnect. The first bump part electrically connects the first interconnect and the driven elements. The second bump part electrically connects the second interconnect and the drive circuit. The through-substrate interconnection part has an electrical resistance lower than an electrical resistance of the second bump part.

Disclosed herein is a buckling actuator, comprising: a first electrode; a second electrode; and a film of a dielectric elastomeric material having a first surface and a second surface sandwiched between the first and second electrodes, wherein the material is formed by the random block copolymerisation of a polymeric material comprising silicon or nitrogen atoms that has two or more acrylate or vinyl end groups, and a polar polymeric material having two or more acrylate or vinyl end groups. Also disclosed herein is a method of forming said dielectric elastomeric material.