To provide a magnetic element that controls generation and annihilation of a skyrmion. A magnetic element is provided, and the magnetic element comprises: a magnetic body that has a spiral magnetic structure in a stable state; a skyrmion control unit that generates skyrmion in the magnetic body by supplying energy to the magnetic body that has the spiral magnetic structure. Also, the magnetic element in which the skyrmion control unit brings the magnetic body into an unstable state by supplying thermal energy pulses to the magnetic body is provided. Furthermore, a skyrmion memory comprising the magnetic element is provided.

An integrated circuit die includes a magnetic tunnel junction as a storage element of a MRAM cell. The integrated circuit die includes a top electrode positioned on the magnetic tunnel junction. The integrated circuit die includes a first sidewall spacer laterally surrounding the top electrode. The first sidewall spacer acts as a mask for patterning the magnetic tunnel junction. The integrated circuit die includes a second sidewalls spacer positioned on a lateral surface of the magnetic tunnel junction.

To provide a magnetic element that controls generation and annihilation of a skyrmion. A magnetic element is provided, and the magnetic element comprises: a magnetic body that has a spiral magnetic structure in a stable state; a skyrmion control unit that generates skyrmion in the magnetic body by supplying energy to the magnetic body that has the spiral magnetic structure. Also, the magnetic element in which the skyrmion control unit brings the magnetic body into an unstable state by supplying thermal energy pulses to the magnetic body is provided. Furthermore, a skyrmion memory comprising the magnetic element is provided.

A method for manufacturing a semiconductor structure includes: providing a substrate; forming a first shielding layer on the substrate; forming a first electrode penetrating the first shielding layer; forming a storage structure on the first electrode; forming a second shielding layer on the top surface and sidewalls of the storage structure, wherein the first shielding layer and the second shielding layer combine into one integrated shielding layer; and forming a second electrode which penetrates the shielding layer and electrically connects to the storage structure.

According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.

Systems and methods are provided for fabricating an assembly with a controllable magnetic state and ferromagnetic resonance. A layer of twisted bilayer graphene is positioned in contact with a transition metal dichalcogenide to form a structure with an interface between the twisted bilayer graphene and the transition metal dichalcogenide. Energy is applied to the interface to adjust one of a magnetic state associated with the interface and a ferromagnetic resonance associated with the interface.

A layer including a topological insulator, the layer including: an arrangement of a plurality of patterns on a surface of the layer, each pattern of the plurality of patterns including at least a non-straight elongated portion. An electronic device including the layer including a topological insulator, and further including first and second electrodes on the layer. Further, the first and second electrodes may be configured to provide electrical connection to the layer. A method of controlling spin transport in the layer includes a topological insulator, the method including: applying circularly polarized light on the layer; and driving an electronic component with a photocurrent produced in the layer by the circularly polarized light.