A magnetic memory structure includes a heavy-metal layer, a plurality of magnetic tunneling junction (MTJ) layer, a conductive layer and an insulation layer. In an example, the pinned-layer of the MTJ layers are arranged in a string form and disposed over the barrier-layer. In an example also disclosed, the pinned-layer, the free-layer of the MTJ layers are arranged in a string form. Whereas the pinned-layers are disposed over the barrier-layer and the free-layers are disposed over the heavy-metal layer. The conductive layer is formed under the heavy-metal layer and includes a first conductive portion and a second conductive portion separated from each other and connected with two end of the heavy-metal layer respectively. The insulation layer fills up an interval between the first conductive portion and the second conductive portion. The conductive layer has an electric conductivity higher than that of the heavy-metal layer.

A magnetic sensor has a magnetoresistive strip including a plurality of magnetoresistive elements arranged in the y-direction through a plurality of hard magnetic members and ferromagnetic films arranged in the x-direction through a magnetic gap. The magnetoresistive strip is disposed around a magnetic gap. One end of the magnetoresistive strip in the y-direction is connected to a terminal electrode not through another magnetoresistive element applied with another magnetic field to be detected, and the other end thereof in the y-direction is connected to a terminal electrode not through another magnetoresistive element applied with the magnetic field to be detected. The magnetoresistive strip S thus has a linear shape not having a folded structure, so that the relation between the direction of a magnetic bias and the direction of flow of current becomes constant over all the sections of the magnetoresistive strip.

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D.sub.1-xE.sub.x, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L1.sub.0 compound, the magnetic layer being in contact with the templating structure.

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D.sub.1-xE.sub.x, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L1.sub.0 compound, the magnetic layer being in contact with the templating structure.

In some embodiments, the present application provides a method for manufacture a memory device. The method includes forming a multilayer stack including a first magnetic layer and a first dielectric layer and forming another magnetic layer. The multilayer stack and the another magnetic layer are tailored to meet dimensions of a package structure. The package structure includes a chip having a memory cell and an insulating material enveloping the chip, where an outer surface of the package structure comprises the insulating material. The tailored multilayer stack and the tailored another magnetic layer are attached to the outer surface of the package structure.

Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

Discussed herein are methods of orienting one-dimensional and two-dimensional materials via the application of stationary and rotating magnetic fields. The oriented one-dimensional and two-dimensional materials may exhibit macroscopic properties, and may be employed in various measurement devices as well as thermal and electrical shielding applications or battery devices. A single 1D or 2D material may be suspended in another material such as dionized water, polymer(s), or other materials during the orientation, and the suspension may remain as a liquid or may be solidified or partially solidified to secure the oriented material(s) into place. The 1D and 2D materials that respond to the magnetic orientation may further cause other elements of the suspension to be oriented in a similar manner.

Discussed herein are methods of orienting one-dimensional and two-dimensional materials via the application of stationary and rotating magnetic fields. The oriented one-dimensional and two-dimensional materials may exhibit macroscopic properties, and may be employed in various measurement devices as well as thermal and electrical shielding applications or battery devices. A single 1D or 2D material may be suspended in another material such as dionized water, polymer(s), or other materials during the orientation, and the suspension may remain as a liquid or may be solidified or partially solidified to secure the oriented material(s) into place. The 1D and 2D materials that respond to the magnetic orientation may further cause other elements of the suspension to be oriented in a similar manner.

A magnetic tunnel junction (MTJ) device includes a bottom electrode, a reference layer, a tunnel barrier layer, a free layer and a top electrode. The bottom electrode and the top electrode are facing each other. The reference layer, the tunnel barrier layer and the free layer are stacked from the bottom electrode to the top electrode, wherein the free layer includes a first ferromagnetic layer, a spacer and a second ferromagnetic layer, wherein the spacer is sandwiched by the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer includes oxidized spacer sidewall parts, the first ferromagnetic layer includes first oxidized sidewall parts, and the second ferromagnetic layer includes second oxidized sidewall parts. The present invention also provides a method of manufacturing a magnetic tunnel junction (MTJ) device.