A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (H.sub.c) upon reaching the critical current density, and |H.sub.EB|>|H.sub.c|.

A vertical Hall sensor includes a Hall effect region and a plurality of contacts formed in or on a surface of the Hall effect region. The plurality of contacts are arranged in a sequence along a path extending between a first end and a second end of the Hall effect region. The plurality of contacts includes at least four spinning current contacts and at least two supply-only contacts. The spinning current contacts are configured to alternatingly function as supply contacts and sense contacts according to a spinning current scheme. The at least four spinning current contacts are arranged along a central portion of the path. The at least two supply-only contacts are arranged on both sides of the central portion in a distributed manner and are configured to supply electrical energy to the Hall effect region according to an extension of the spinning current scheme.

A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.

A spin-orbit torque device is described. The spin-orbit torque device comprising an interfacing layer and a magnetic layer having a switchable magnetization direction. An interface is formed between the interfacing layer and the magnetic layer, the interface having a 3m1 crystallographic point group symmetry adapted to interact with an electric current to generate a spin torque for switching the magnetization direction of the magnetic layer. A method for fabricating the spin-orbit device and a method for switching the switchable magnetization of a spin-orbit torque device are also described.

A packaged sensor chip includes a lead frame to which there is attached a sensor element designed to generate a sensor signal that depends on a magnetic field to which the sensor element is exposed; and a package therefor, wherein the lead frame has function terminals and wherein the lead frame has at least two calibration terminals that are arranged on two other opposing sides of the package, wherein the lead frame has conductive structures that connect the at least two calibration terminals, wherein the conductive structures are structured so as to generate a calibration magnetic field for the sensor element when a current flows through them, and wherein the conductive structures are part of a connection structure that connects a plurality of lead frames before the plurality of lead frames are disconnected from one another in a first direction in which the other two sides are opposite one another.

Hybrid Hall Effect Devices implemented with Spin Transfer Torque write capability are configured as magnetoelectronic (ME) devices. These devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

Provided is an electric-current-controllable magnetic unit, including: a substrate, an electric-current channel disposed on the substrate, the electric-current channel including a composite heavy-metal multilayer comprising at least one heavy-metal; a capping layer disposed over the electric-current channel; and at least one ferromagnetic layer disposed between the electric-current channel and the capping layer.

Disclosed is a magnetic device including a spin sinker. The magnetic device includes a storage medium, a spin sinker, and a read node. The storage medium receives an in-plane current from outside and generates a self-generated spin current that perpendicularly flows to a charge current, thereby controlling a data structure with the self-generated spin current. The spin sinker receives and attenuates the spin current. The read node measures a magnetoresistance of a data structure through the storage medium. The storage medium is made of a magnetic metal and the spin sinker is made of a magnetic insulating material.

Spin orbit torque (SOT) devices with topological insulator (TI) and heavy metal insert are described. In an example, an integrated circuit structure includes a spin orbit coupling (SOC) interconnect including a TI material. A magnetic layer is above the SOC interconnect. An insert layer includes a heavy metal between and in contact with the TI material and the magnetic layer.

A coupler is disclosed that employs hall-effect sensing technology. Specifically, the coupler is configured to produce an output voltage by converting the magnetic field generated by a current conductor at an input side. The output and input sides may be electrically isolated from one another but may be coupled via the hall-effect sensing technology, such as a hall-effect sensor. The output and input sides may be provided in an overlapping configuration.