A spintronics element (100) includes an antiferromagnetic layer (20) and an MTJ element (30). The antiferromagnetic layer (20) is made of a canted antiferromagnet having a canted magnetic moment to exhibit a relatively tiny magnetization, and allows an electric current flowing in one direction (y-axis direction) parallel to an in-plane direction to induce spin accumulation in which spins of electrons are polarized parallel to or obliquely to an out-of-plane direction (z-axis direction). The MTJ element (30) is stacked on the antiferromagnetic layer (20), contains a ferromagnet with a magnetization (M11) aligned with the out-of-plane direction that is a stacking direction, and allows a spin current generated in the antiferromagnetic layer (20) to exert a spin-orbit torque on the magnetization (M11), thereby causing reversal of the magnetization (M11).

Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.

A magnetic memory device including bottom electrode bridges and a spin-orbit torque structure overlapping and physically coupled to the bottom electrode bridges and a method of forming the same are disclosed. In an embodiment, a memory includes a first electrode on a first via; a second electrode on a second via; a spin-orbit torque (SOT) structure physically and electrically coupled to the first electrode and the second electrode, the SOT structure overlapping the first electrode and the second electrode; and a magnetic tunnel junction (MTJ) on the SOT structure.

A magnetic memory device including bottom electrode bridges and a spin-orbit torque structure overlapping and physically coupled to the bottom electrode bridges and a method of forming the same are disclosed. In an embodiment, a memory includes a first electrode on a first via; a second electrode on a second via; a spin-orbit torque (SOT) structure physically and electrically coupled to the first electrode and the second electrode, the SOT structure overlapping the first electrode and the second electrode; and a magnetic tunnel junction (MTJ) on the SOT structure.

A magnetic memory device including a lower electrode on a substrate; a conductive line on the lower electrode; and a magnetic tunnel junction pattern on the conductive line, wherein the conductive line includes a first conductive line adjacent to the magnetic tunnel junction pattern; a second conductive line between the lower electrode and the first conductive line; and a high resistance layer at least partially between the first conductive line and the second conductive line, a resistivity of the second conductive line is lower than a resistivity of the first conductive line, and a resistivity of the high resistance layer is higher than the resistivity of the first conductive line and higher than the resistivity of the second conductive line.

A magnetic memory device including a lower electrode on a substrate; a conductive line on the lower electrode; and a magnetic tunnel junction pattern on the conductive line, wherein the conductive line includes a first conductive line adjacent to the magnetic tunnel junction pattern; a second conductive line between the lower electrode and the first conductive line; and a high resistance layer at least partially between the first conductive line and the second conductive line, a resistivity of the second conductive line is lower than a resistivity of the first conductive line, and a resistivity of the high resistance layer is higher than the resistivity of the first conductive line and higher than the resistivity of the second conductive line.

Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.

Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.

In some examples, a package comprises first and second terminals and a conductive pathway coupling the first and second terminals. The conductive pathway is configured to generate a magnetic field. The package comprises a conductive member aligned with and coupled to the conductive pathway. The conductive pathway and the conductive member have a common shape. The package also comprises an insulative layer coupled to the conductive member and a die coupled to the insulative layer and having a circuit configured to measure the magnetic field. The circuit faces the conductive pathway.

Disclosed is a magnetic device including a spin sinker. The magnetic device includes a storage medium, a spin sinker, and a read node. The storage medium receives an in-plane current from outside and generates a self-generated spin current that perpendicularly flows to a charge current, thereby controlling a data structure with the self-generated spin current. The spin sinker receives and attenuates the spin current. The read node measures a magnetoresistance of a data structure through the storage medium. The storage medium is made of a magnetic metal and the spin sinker is made of a magnetic insulating material.