A magnetic logic device having two magnetic elements and a conductive element coupled to the two magnetic elements and arranged at least substantially perpendicular to the magnetic elements, wherein the device is configured, for each magnetic element, to have a magnetisation state with a perpendicular easy axis, and to switch the magnetisation state in response to a spin current generated in the magnetic element in response to a write current applied to the magnetic element, and configured to generate, as an output, a Hall voltage across the conductive element in response to a respective read current applied to each magnetic element, wherein a magnitude of the Hall voltage is variable, depending on a direction of the magnetisation state of each magnetic element and a direction of the respective read current applied to each magnetic element, for the device to provide outputs corresponding to one of a plurality of logical operations.

A magnetic structure capable of field-free spin-orbit torque switching includes a spin-orbit coupling base layer and a ferromagnetic layer formed thereon. The spin-orbit coupling base layer is made from a particular crystal material. The ferromagnetic layer has magnetization perpendicular to a plane coupled to the spin-orbit coupling base layer, and is made from a particular ferromagnetic material with perpendicular magnetic anisotropy. The perpendicular magnetization of the ferromagnetic layer is switchable by an in plane current applied to the spin-orbit coupling base layer without application of an external magnetic field. A memory device and a production method regarding the magnetic structure are also provided.

A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. The heavy-metal nanostrip includes at least a first layer including a heavy metal and a second layer which includes a different heavy-metal. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis, the ferromagnetic nanomagnet having both a perpendicular-to-the-plane anisotropy H.sub.kz and an in-plane anisotropy H.sub.kx and the ferromagnetic nanomagnet having a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of the flow of electrical charge through the heavy-metal nanostrip includes an angle ξ with respect to the short axis of the nanomagnet.

A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.

Various embodiments include an electrical device comprising an antiferromagnetic topological insulator having a surface comprising a bulk domain wall configured to support a first type of 1D chiral channel, a surface step configured to support a second 1D chiral channel and intersecting the bulk domain wall to form thereat a quantum point junction.

An apparatus is provided to improve spin injection efficiency from a magnet to a spin orbit coupling material. The apparatus comprises: a first magnet; a second magnet adjacent to the first magnet; a first structure comprising a tunneling barrier; a third magnet adjacent to the first structure; a stack of layers, a portion of which is adjacent to the third magnet, wherein the stack of layers comprises spin-orbit material; and a second structure comprising magnetoelectric material, wherein the second structure is adjacent to the first magnet.

A magnetic element according to an embodiment includes a wiring layer extending in a first direction and including a ferromagnetic material and a nonmagnetic layer laminated on the wiring layer in a second direction. The wiring layer includes a side surface inclined with respect to the second direction in a cross section orthogonal to the first direction. The side surface has one or more bending points at which an inclination angle with respect to the second direction becomes discontinuous. An inclination angle of a first inclined surface far from the nonmagnetic layer is smaller than an inclination angle of a second inclined surface close to the nonmagnetic layer in a state in which a first bending point at a position farthest from the nonmagnetic layer among the bending points is interposed between the inclination angles.

An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization (e.g., perpendicular magnetization); a first structure adjacent to the magnetic junction, wherein the first structure comprises metal (e.g., Hf, Ta, W, Ir, Pt, Bi, Cu, Mo, Gf, Ge, Ga, or Au); an interconnect adjacent to the first structure; and a second structure adjacent to the interconnect such that the first structure and the second structure are on opposite surfaces of the interconnect, wherein the second structure comprises a magnet with a second magnetization (e.g., in-plane magnetization) substantially different from the first magnetization.

A die pad, a signal processing IC, an adhesive layer, and at least one magnetoelectric conversion element included in a magnetic sensor are encapsulated by a molding resin. At least a part of the first end surface of the signal processing IC is positioned on a side closer to the at least one magnetoelectric conversion element than a first end surface of the die pad on a side of the at least one magnetoelectric conversion element in a plan view. An isolation portion into which the molding resin enters is provided between the first surface of the die pad on a side of the first end surface, and the first surface of the signal processing IC on a side of the first end surface, and a thickness of the isolation portion is smaller than a thickness of the die pad.

A die pad, a signal processing IC, an adhesive layer, and at least one magnetoelectric conversion element included in a magnetic sensor are encapsulated by a molding resin. At least a part of the first end surface of the signal processing IC is positioned on a side closer to the at least one magnetoelectric conversion element than a first end surface of the die pad on a side of the at least one magnetoelectric conversion element in a plan view. An isolation portion into which the molding resin enters is provided between the first surface of the die pad on a side of the first end surface, and the first surface of the signal processing IC on a side of the first end surface, and a thickness of the isolation portion is smaller than a thickness of the die pad.