An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

Disclosed are a neuron and a neuromorphic system including the same. More particularly, a neuron according to an embodiment of the present invention includes a completely depleted Silicon-On-Insulator (SOI) device whose a depletion region is controlled according to an inputted electrical signal to perform integration and leakage.

The present disclosure relates to a field of memory technical, and in particular to a magnetoresistive device, a method for changing a resistance state of the magnetoresistive device, and a synapse learning module. The magnetoresistive device includes a top electrode, a ferromagnetic reference layer, a tunneling layer, a ferromagnetic free layer, a spin-orbit coupling layer, and a bottom electrode that are arranged in sequence along a preset direction, where the spin-orbit coupling layer includes a first thickness region and a second thickness region distributed alternately, and a thickness of the first thickness region is different form a thickness of the second thickness region; and the ferromagnetic free layer includes a pinning region, and a position of the pinning region is in one-to-one correspondence with a position of the first thickness region.

A method for manufacturing a magnetic memory array provides back end of line annealing for associated processing circuitry without causing thermal damage to magnetic memory elements of the magnetic memory array. An array of magnetic memory element pillars is formed on a wafer, and the magnetic memory elements are surrounded by a dielectric isolation material. After the pillars have been formed and surrounded by the dielectric isolation material an annealing process is performed to both anneal the memory element pillars to form a desired grain structure in the memory element pillars and also to perform back end of line thermal processing for circuitry associated with the memory element array.

Managing looped, iterative and recursive operations through applying a parameterized instance of an assertion-model apportionment-sub-model pair to a reference data model to produce a parameterized outcome model. Based on a degree of convergence of the parameterized outcome model toward a target parameterized instance of the assertion-model apportionment-sub-model pair, assembling and parameterizing a next assertion-model and a next apportionment-sub-model pair. Repeating these steps until an instance of a parameterized outcome model meets a preconfigured degree of convergence toward a corresponding target parameterized instance of the assertion-model apportionment-sub-model pair.

An integrated sensor device includes: a semiconductor substrate comprising a horizontal Hall element, and an integrated magnetic flux concentrator located substantially above said horizontal Hall element, wherein the first magnetic flux concentrator has a shape with a geometric center which is aligned with a geometric centre of the horizontal Hall element; and wherein the shape has a height H and a transversal dimension D, wherein H≥30 μm and/or wherein (H/D)≥25%. The integrated magnetic flux concentrator may be partially incorporated in the “interconnection stack”. A method is provided for producing such an integrated sensor device.

A product-sum operation device, a neuromorphic device, and a method for using the product-sum operation device are provided which can, when applied to a neural network, curb the possibility that the performance of the neural network may be greatly impaired. The product-sum operation device includes a product operator and a sum operator. The product operator includes a plurality of product operation elements, each of which is a resistance change element. The sum operator includes an output detector that detects the sum of outputs from the plurality of product operation elements and the resistance change element includes a fuse portion which is disconnected when a malfunction which increases an output current from the resistance change element has occurred in the resistance change element.

An arithmetic operation circuit including: a variable resistance element that includes three terminals that are a first terminal, a second terminal, and a third terminal and is configured to be able to change a resistance value; a first electrode connected to the first terminal; a second electrode; a third electrode; a first switching element connected between the second electrode and the second terminal; a second switching element connected between the third electrode and the third terminal; and a capacitor connected between a transmission line connecting the second terminal and the first switching element and the ground.

This light detection element includes a meta-lens that includes nanostructures which are two-dimensionally arranged; and a magnetic element that includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. Light which passes through the meta-lens is applied to the magnetic element.