The present invention provides a method for the production of an electronic device, the method comprising: (i) providing a substrate comprising first and second layers on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, (ii) supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on a surface of the first layer of the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, (iii) selectively laser ablating the graphene to expose one or more portions of the surface of the first layer of the substrate, and (iv) selectively laser ablating the surface of the first layer of the substrate to expose one or more portions of the second layer of the substrate, wherein the first layer is an electrically conductive layer and the second layer is an electrically insulative layer, or wherein the second layer is an electrically conductive layer and the first layer is an electrically insulative layer.

A magnetic domain wall (MDW) motion device. The MDW motion device may include a ferromagnetic layer with perpendicular magnetic anisotropy and non-magnetic metal layers extending parallel to and in contact with the ferromagnetic layer. The ferromagnetic layer may include first ferromagnetic regions, which are arranged in an extension direction of the ferromagnetic layer, and second ferromagnetic regions, which are provided between an adjacent pair of the first ferromagnetic regions. The first and second ferromagnetic regions may have spin torque coefficients of opposite signs, and an MDW positioned near an interface between the first and second ferromagnetic regions may be moved by an in-plane current flowing through the non-magnetic metal layer.

A magnetic field sensor including a first plurality and a second plurality of magnetoresistive sensors, wherein each magnetoresistive sensor of the first plurality and the second plurality of magnetoresistive sensors comprises: an electrode; a reference layer adjacent to the electrode, wherein the reference layer includes a synthetic antiferromagnetic structure; a magnetic sense element; and an intermediate layer between the reference layer and the magnetic sense element; and one or more conductors configured to electrically couple the magnetoresistive sensors of the first plurality and the second plurality in various configurations.

According to one embodiment, an oscillator includes first to third conductive bodies, a first stacked unit, and a magnetic unit. The first conductive body includes first, second region, and third regions. The second conductive body includes a portion separated from the third region. The first stacked unit is provided between the third region and the portion. The first stacked unit includes first to fourth magnetic layers, and first to third intermediate layers. At least a portion of the magnetic unit and at least a portion of the first stacked unit overlap each other. In a first state, the first to fourth magnetizations are aligned with a third direction perpendicular to the first direction and the second direction. The second magnetization has a component in a reverse orientation of the first magnetization. The fourth magnetization has a component in a reverse orientation of the third magnetization.

A gesture manipulation method and a gaming system are disclosed herein. The gesture manipulation method is suitable for an electronic apparatus including a touch sensor and means for displaying. The gesture manipulation method includes following steps. A gesture input is detected by the touch sensor when a visual card image is displayed on the means for displaying and the visual card image shows a back side of at least a playing card. When at least one contact point of the gesture input is detected to move along a specific pattern relative to the visual card image, a corresponding function is triggered or the visual card image is adjusted in response to the gesture input moved along the specific pattern.

Magnetic devices and methods for forming a magnetic device are disclosed. The magnetic device includes a MTJ element. The MTJ element has first and second MTJ terminals which include first and second electrodes. The free layer of the MTJ element includes a natural precessional frequency which undergoes Rabi oscillation in the presence of a radio frequency (RF) matching the natural precessional frequency. A strain induced magnetoelectric (SIM) unit contacts one of the electrodes proximate to the free layer of the MTJ element while a digital line is coupled to the SIM unit. A desired voltage is provided on the digital line to cause the SIM unit to produce a desired strain on the electrode proximate to the free layer to tune the precessional frequency of the free layer to a desired precessional frequency for detecting a desired RF by the magnetic device. The desired RF causes a change in current through the MTJ element due to Rabi oscillation.

A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a portion having an approximate quadrant shape, and a portion contiguous to the approximate quadrant portion and substantially parallel to the semiconductor substrate.

Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical-cross section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a curve-shaped portion and a portion substantially parallel to the semiconductor substrate. The magnetic body has at least a part of a structure made of non-magnetic substance embedded therein.

An integrated magnetoresistive sensor of an AMR (Anisotropic Magneto Resistance) type, formed by a magnetoresistive strip of ferromagnetic material and having an elongated shape with a preferential magnetization direction. A set/reset coil has a stretch, which extends over and transversely to the magnetoresistive strip. A concentrating region, also of ferromagnetic material, extends over the stretch of the set/reset coil so as to form a magnetic circuit for the field generated by the set/reset coil during steps of refresh and maintenance of magnetization of the magnetoresistive coil.