The technologies described herein are generally directed to generating, detecting, and manipulating Majorana zero-energy modes which can be utilized to achieve the topological quantum computation, in accordance with one or more embodiments. One or more embodiments described include a platform based on a quantum anomalous Hall insulator/superconductor heterostructure. Specifically, the method can include making a cut in the quantum anomalous Hall insulator material to form a topologically protected helical channel with counter-propagating electron modes. When superconductivity is induced on the helical channel, Majorana zero-energy modes are formed. Furthermore, controllable gates and quantum dots can be integrated to the system such that the braiding of Majorana zero-energy modes can be achieved. This method provides a potential realization of the scalable fault-tolerant quantum computation.

Provided are a heat shield and a Josephson junction array chip system, the heat shield includes a cryostat, a sensor group, a radiation shield plate, a clamp assembly, and a vacuum shield cover assembly; the cryostat includes a cold head, a first-stage chassis, and a second-stage chassis; the vacuum shield cover assembly includes a first vacuum shield cover, a second vacuum shield cover, and a heat shield aluminum oxide layer; and the cold head is located in the first vacuum shield cover; and the heat shield aluminum oxide layer is coated on a surface of at least one of the first vacuum shield cover or the second vacuum shield cover; the clamp assembly on the radiation shield plate is configured to fix the Josephson junction array chip; and the sensor group adjacent to the Josephson junction array chip is arranged on the radiation shield plate.

Described are various embodiments of a quantum device and method operating the same. In one embodiment, the quantum device comprises a substrate; a superconducting circuit element supported on a substrate surface of said substrate, the superconducting circuit element exhibiting superconductivity during operation of the quantum device; and a passive magnetic element, the passive magnetic element generating a magnetic field, the superconducting circuit element being directly or indirectly exposed to at least a portion of the magnetic field during operation of the quantum device. In some embodiments, the superconducting circuit element is indirectly exposed to the portion of the magnetic field, the portion of the magnetic field being guided, at least in part, from a first location proximate the passive magnetic element to a second location proximate the superconducting circuit element by one or more magnetic field guides.

Described are various embodiments of a quantum device and method operating the same. In one embodiment, the quantum device comprises a substrate; a superconducting circuit element supported on a substrate surface of said substrate, the superconducting circuit element exhibiting superconductivity during operation of the quantum device; and a passive magnetic element, the passive magnetic element generating a magnetic field, the superconducting circuit element being directly or indirectly exposed to at least a portion of the magnetic field during operation of the quantum device. In some embodiments, the superconducting circuit element is indirectly exposed to the portion of the magnetic field, the portion of the magnetic field being guided, at least in part, from a first location proximate the passive magnetic element to a second location proximate the superconducting circuit element by one or more magnetic field guides.

This disclosure relates to compounds of formula (I):

L.sub.nD.sub.m(B.sub.xB.sub.1-x).sub.r(Z.sub.tZ.sub.1-t).sub.qM.sub.pA.sub.y(I)

in which n, m, x, r, t, q, p, L, D, B, B, Z, Z, M, and A are defined in the specification. These compounds can exhibit superconductivity at a high temperature.

A method of manufacturing a device includes forming a conductive film made of a superconducting material on a substrate having a first surface, a second surface opposite to the first surface, and a through hole penetrating between the first surface and the second surface, the conductive film extending from the first surface to the second surface via a side surface of the through hole, patterning the conductive film on the first surface to form a first wiring pattern, patterning the conductive film on the second surface to form a second wiring pattern, and forming a quantum bit element connected to the first wiring pattern.

A system and method for treating a cavity comprises arranging a niobium structure in a coating chamber, the coating chamber being arranged inside a furnace, coating the niobium structure with tin thereby forming an Nb.sub.3Sn layer on the niobium structure, and doping the Nb.sub.3Sn layer with nitrogen, thereby forming a nitrogen doped Nb.sub.3Sn layer on the niobium structure.