A process for the dry synthesis of a luminophore of formula A.sub.x[BF.sub.y]:C includes a stage of providing an initial composition comprising at least two synthetic precursors and at least one chemical doping source, a stage of heating the initial composition up to a fluorination temperature under an inert atmosphere or under vacuum, a stage of treatment under a fluorine atmosphere of the composition obtained on conclusion of the heating stage and a stage of returning to ambient temperature under an inert atmosphere. A composition comprising a luminophore of formula A.sub.x[BF.sub.y]:C and obtained according to the synthetic process described above, the composition being devoid of hydrogen fluoride.

A luminophore having the general empirical formula X′.sub.1−xA′.sub.y(Al.sub.1+zA′.sub.3−z) O.sub.4:E′ that crystallizes in a tetragonal crystal system. X′ may be Mg, Ca, Sr, Ba, and combinations thereof; A′ may be Li, Na, K, Rb, Cs, and combinations thereof; E′ may be Eu, Ce, Yb, Mn, and combinations thereof; 0<x<0.25; y≤x; and z=0.5(2x−y).

Provided herein are phosphors of the general molecular formula:

A.sub.3-2xEu.sub.xMP.sub.3O.sub.9N,

wherein the variables are as defined herein. Methods of producing the phosphors are also provided. In some aspects, the present disclosure provides light-emitting devices comprising these phosphors.

A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.

Bulk assemblies are provided, which may have desirable photoluminescence quantum efficiencies. The bulk assemblies may include two or more metal halides, and a wide band gap organic network. The wide band gap organic network may include organic cations. The metal halides may be disposed in the wide band gap organic network. Light emitting composite materials also are provided.

A white light source includes a light source and a phosphor conversion component. The light source emits short wavelength light peaked at a peak wavelength of 570 nanometers or shorter. The phosphor conversion component includes a light conversion layer comprising a phosphor effective to convert the short wavelength light to converted light. The light conversion layer includes light passages comprising openings or passage material that does not comprise the phosphor and is light transmissive for the short wavelength light. The light source is disposed respective to the phosphor conversion component so as to illuminate the light conversion layer with the emitted short wavelength light and to pass the short wavelength light through the light passages.

The wavelength conversion member includes a wavelength conversion layer containing quantum dots, in which the wavelength conversion layer is provided between two substrates, at least one of the two substrates has a barrier layer, the wavelength conversion member has a total thickness of 120 .Math.m or less, the wavelength conversion member has a rub resistance of 100 g or more, and the wavelength conversion member exhibits a bend resistance of a mandrel diameter of 4 mm or less in a bend resistance test carried out according to a cylindrical mandrel method specified in JIS K 5600-5-1:1999.

A phosphor is specified. The phosphor has the general molecular formula: (MA).sub.a(MB).sub.b(MC).sub.c(MD).sub.d(TA).sub.e(TB).sub.f(TC).sub.g(TD).sub.h(TE).sub.i(TF).sub.j(XA).sub.k(XB).sub.l(XC).sub.m(XD).sub.n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC═N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; 3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m<0.875 v and/or v≥l>0.125 v.

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.