A single crystal furnace is provided, including a main furnace chamber; an auxiliary furnace chamber communicating with the main furnace chamber; and a material chamber provided with a charging inlet and a charging mechanism, wherein the material chamber is communicated with the main furnace chamber through the charging inlet, the charging mechanism is telescopically coupled to the charging inlet for charging materials into a crucible in the main furnace chamber. In the single crystal furnace, the material chamber is provided, so that charging operation may be performed during taking out the monocrystalline silicon rod, thereby effectively shortening the time consumed by taking out the monocrystalline silicon rod and the charging operation, and improving production efficiency.

A single crystal furnace is provided, including a main furnace chamber; an auxiliary furnace chamber communicating with the main furnace chamber; and a material chamber provided with a charging inlet and a charging mechanism, wherein the material chamber is communicated with the main furnace chamber through the charging inlet, the charging mechanism is telescopically coupled to the charging inlet for charging materials into a crucible in the main furnace chamber. In the single crystal furnace, the material chamber is provided, so that charging operation may be performed during taking out the monocrystalline silicon rod, thereby effectively shortening the time consumed by taking out the monocrystalline silicon rod and the charging operation, and improving production efficiency.

Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

The present disclosure provides a device for preparing a crystal and a method for growing a crystal. The device may include a growth chamber configured to execute a crystal growth; and a temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth. The method may include placing a seed crystal and a source material in a growth chamber to grow a crystal; and controlling a heating component based on information of a temperature sensing component, to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during a crystal growth.

A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.