C01G17/00

Polymer-polymetalate composite ink, and preparation method and application thereof

The present invention discloses a polymer-metal compound composite ink, a preparation method and application thereof. The composite ink comprises: at least one polymer; at least one metal compound material, the metal compound material being selected from polyoxometalate compounds and nanocrystalline metal oxides; at least one solvent which is used for forming a disperse system in the form of a uniform fluid together with the remaining components in the composite ink. The present invention also discloses a method for preparing the composite ink. The composite ink of the present invention is easily available in raw material, easy to prepare and low in cost, and can be manufactured into a composite thin film by spin-coating, printing or in other ways. The composite thin film, as an electrode modification layer, can be applied to photoelectric devices such as solar cells or light-emitting diodes, so as to improve the contact performance between an electrode and an organic active layer and thus enhance the performance and yield of photoelectric devices.

Method for the manufacture of highly purified 68Ge material for radiopharmaceutical purposes

A method for the manufacture of highly purified .sup.68Ge material for radiopharmaceutical purposes. The invention particularly concerns the production of .sup.68Ge-API (API=Active Pharmaceutical Ingredient) solution complying with the Guidelines for good manufacturing practices (GMP). Starting material for the method of the present invention can be a .sup.68Ge stock solution of commercial or other origin as raw material. Such .sup.68Ge containing raw solutions are purified from potential metal and organic impurities originating from production processes. The radiochemical method disclosed is based on a twofold separation of .sup.68Ge from organic and metallic impurities with two different adsorbent materials. During the first separation phase .sup.68Ge is purified from both organic and metallic impurities by adsorption in germanium tetrachloride form, after which hydrolyzed .sup.68Ge is purified from remaining metallic impurities by cation exchange. The final .sup.68Ge-API-product e.g. fulfills the regulatory requirements for specifications of the GMP production of .sup.68Ge/.sup.68Ga generators.

Tris(trichlorosilyl)dichlorogallylgermane, process for the preparation thereof and use thereof

A process can be used for the preparation of tris(trichlorosilyl)dichlorogallylgermane, which is a chlorinated, uncharged substance.

Tetrakis(trichlorosilyl)germane, process for the preparation thereof and use thereof

A novel process provides for the preparation of the chlorinated, uncharged substance tetrakis(trichlorosilyl)germane, and for the use thereof.

QUANTUM DEVICES AND METHODS FOR MAKING THE SAME
20230389346 · 2023-11-30 ·

The present disclosure relates to structures and methods of quantum devices. A quantum device comprises a substrate with an insulation surface and at least one quantum component disposed on the insulation surface of the substrate. The at least one quantum component may comprise multiple plateau members and at least one quantum dot. Each plateau member is disposed at an angle against an adjacent plateau member. Each quantum dot is formed within an insulation body and disposed at an included-angle location of two adjacent plateau members of the multiple plateau members. In addition, the at least one quantum component is operable under high temperature, such as above 4 K.

QUANTUM DEVICES AND METHODS FOR MAKING THE SAME
20230389346 · 2023-11-30 ·

The present disclosure relates to structures and methods of quantum devices. A quantum device comprises a substrate with an insulation surface and at least one quantum component disposed on the insulation surface of the substrate. The at least one quantum component may comprise multiple plateau members and at least one quantum dot. Each plateau member is disposed at an angle against an adjacent plateau member. Each quantum dot is formed within an insulation body and disposed at an included-angle location of two adjacent plateau members of the multiple plateau members. In addition, the at least one quantum component is operable under high temperature, such as above 4 K.

LUMINESCENT COMPONENT

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element including first luminescent crystals from the class of perovskite crystals, embedded a first polymer P1 and a second element comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

LUMINESCENT COMPONENT

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element including first luminescent crystals from the class of perovskite crystals, embedded a first polymer P1 and a second element comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

PROCESS FOR MAKING SYNTHETIC MINERALS

Methods for making a synthetic mineral and methods for making synthetic mineral precursors and the products of said methods.

Light-absorbing material, method for producing the same, and solar cell including the same

A light-absorbing material includes a compound, wherein the compound has a perovskite crystal structure represented by the formula AMX.sub.3 where a Cs.sup.+ ion is located at an A-site, a Ge.sup.2+ ion is located at an M-site, and I.sup.− ions are located at X-sites, and at least a part of the compound has an orthorhombic perovskite crystal structure. An X-ray diffraction pattern of the compound measured using Cu Kα radiation may have a first peak at a diffraction angle (2θ) of 25.4° or more and 25.8° or less and a second peak at a diffraction angle (2θ) of 24.9° or more and 25.3° or less, and an intensity of the first peak may be 30% or more of an intensity of the second peak.