A double capsule assembly includes an outer capsule and an inner capsule configured to be positioned within the outer capsule. The inner capsule is configured to have a sample positioned therein. The double capsule assembly is configured to be placed in a solid media assembly to analyze or synthesize the sample.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Disclosed is a method for producing transition metal oxide fine particles having a size smaller than several micrometers (μm), and more preferably, having a size of several hundred nanometers (nm). To this end, the method for producing transition metal oxide fine particles of the present invention comprises dissolving a transition metal oxide in a strongly basic aqueous solution, and titrating same with a strongly acidic aqueous solution, thereby precipitating transition metal oxide fine particles.

A nanostructure is provided that in one embodiment includes a cluster of cylindrical bodies. Each of the cylindrical bodies in the cluster are substantially aligned with one another so that their lengths are substantially parallel. The composition of the cylindrical bodies include tungsten (W) and sulfur (S), and each of the cylindrical bodies has a geometry with at least one dimension that is in the nanoscale. Each cluster of cylindrical bodies may have a width dimension ranging from 0.2 microns to 5.0 microns, and a length greater than 5.0 microns. In some embodiments, the cylindrical bodies are composed of tungsten disulfide (WS.sub.2). In another embodiment the nanolog is a particle comprised of external concentric disulfide layers which encloses internal disulfide folds and regions of oxide. Proportions between disulfide and oxide can be tailored by thermal treatment and/or extent of initial synthesis reaction.

A nanostructure is provided that in one embodiment includes a cluster of cylindrical bodies. Each of the cylindrical bodies in the cluster are substantially aligned with one another so that their lengths are substantially parallel. The composition of the cylindrical bodies include tungsten (W) and sulfur (S), and each of the cylindrical bodies has a geometry with at least one dimension that is in the nanoscale. Each cluster of cylindrical bodies may have a width dimension ranging from 0.2 microns to 5.0 microns, and a length greater than 5.0 microns. In some embodiments, the cylindrical bodies are composed of tungsten disulfide (WS.sub.2). In another embodiment the nanolog is a particle comprised of external concentric disulfide layers which encloses internal disulfide folds and regions of oxide. Proportions between disulfide and oxide can be tailored by thermal treatment and/or extent of initial synthesis reaction.

A gas-sensitive material, a preparation method therefore and an application thereof, and a gas sensor using the gas-sensitive material are provided. The gas-sensitive material is a carbon material-metal oxide composite nanomaterial formed by compounding a carbon material and metal oxides. The content of the carbon material is 0.5˜20 wt. % and the content of the metal oxides is 80˜99.5 wt. %; the metal oxides contain tungsten oxide and one or more selected from tin oxide, iron oxide, titanium oxide, copper oxide, molybdenum oxide, and zinc oxide; the metal oxides are formed on the carbon material in the form of nanowires, and the nanowires are tungsten oxide-doped nanowires. The gas-sensitive material has reduced resistance, is capable of responding to various gases at a reduced working temperature.

According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.

According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.

A tungsten(VI) oxytetrachloride having a chemical purity of greater than 99.95%. The tungsten(VI) oxytetrachloride has a fraction of compounds selected from WCl.sub.6, WO.sub.2Cl.sub.2, WO.sub.3 and WO.sub.2, as defined as a ratio of a reflection having a highest intensity of one of WCl.sub.6, WO.sub.2Cl.sub.2, WO.sub.3 and WO.sub.2, (I(P2)100) in an x-ray diffraction pattern to a reflection having a highest intensity of the tungsten(VI) oxytetrachloride (I(WOCl.sub.4)100) in the x-ray diffraction pattern, expressed as I(P2)100/I(WOCl.sub.4)100, of less than 0.03.