A gated Josephson junction includes a substrate and a vertical Josephson junction formed on the substrate and extending substantially normal the substrate. The vertical Josephson junction includes a first superconducting layer, a semiconducting layer, and a second superconducting layer. The first superconducting layer, the semiconducting layer, and the second superconducting layer form a stack that is substantially perpendicular to the substrate. The gated Josephson junction includes a gate dielectric layer in contact with the first superconducting layer, the semiconducting layer, and the second superconducting layer at opposing side surfaces of the vertical Josephson junction, and a gate electrically conducting layer in contact with the gate dielectric layer. The gate electrically conducting layer is separated from the vertical Josephson junction by the gate dielectric layer. In operation, a voltage applied to the gate electrically conducting layer modulates a current through the semiconducting layer of the vertical Josephson junction.

A gated Josephson junction includes a substrate and a vertical Josephson junction formed on the substrate and extending substantially normal the substrate. The vertical Josephson junction includes a first superconducting layer, a semiconducting layer, and a second superconducting layer. The first superconducting layer, the semiconducting layer, and the second superconducting layer form a stack that is substantially perpendicular to the substrate. The gated Josephson junction includes a gate dielectric layer in contact with the first superconducting layer, the semiconducting layer, and the second superconducting layer at opposing side surfaces of the vertical Josephson junction, and a gate electrically conducting layer in contact with the gate dielectric layer. The gate electrically conducting layer is separated from the vertical Josephson junction by the gate dielectric layer. In operation, a voltage applied to the gate electrically conducting layer modulates a current through the semiconducting layer of the vertical Josephson junction.

A method for validation and runtime estimation of a quantum algorithm includes receiving a quantum algorithm and simulating the quantum algorithm, the quantum algorithm forming a set of quantum gates. The method further includes analyzing a first set of parameters of the set of quantum gates and analyzing a second set of parameters of a set of qubits performing the set of quantum gates. The method further includes transforming, in response to determining at least one of the first set of parameters or the second set of parameters meets an acceptability criterion, the quantum algorithm into a second set of quantum gates.

A method for validation and runtime estimation of a quantum algorithm includes receiving a quantum algorithm and simulating the quantum algorithm, the quantum algorithm forming a set of quantum gates. The method further includes analyzing a first set of parameters of the set of quantum gates and analyzing a second set of parameters of a set of qubits performing the set of quantum gates. The method further includes transforming, in response to determining at least one of the first set of parameters or the second set of parameters meets an acceptability criterion, the quantum algorithm into a second set of quantum gates.

Systems and techniques that facilitate electronic generation of three-dimensional quantum circuit diagrams are provided. In various embodiments, a system can comprise a data component that can access qubit topology data characterizing a quantum computing device. In various aspects, the system can further comprise a rendering component that can render a three-dimensional quantum circuit diagram based on the qubit topology data. In various instances, the qubit topology data can indicate which qubits of the quantum computing device are coupled together. In various cases, the rendering component can render the three-dimensional quantum circuit diagram by generating a two-dimensional qubit configuration model of the quantum computing device based on which qubits of the quantum computing device are coupled together, by extruding one or more qubit lines three-dimensionally outward from the two-dimensional qubit configuration model, and by rendering one or more quantum gates on the one or more qubit lines.

Systems and techniques that facilitate electronic generation of three-dimensional quantum circuit diagrams are provided. In various embodiments, a system can comprise a data component that can access qubit topology data characterizing a quantum computing device. In various aspects, the system can further comprise a rendering component that can render a three-dimensional quantum circuit diagram based on the qubit topology data. In various instances, the qubit topology data can indicate which qubits of the quantum computing device are coupled together. In various cases, the rendering component can render the three-dimensional quantum circuit diagram by generating a two-dimensional qubit configuration model of the quantum computing device based on which qubits of the quantum computing device are coupled together, by extruding one or more qubit lines three-dimensionally outward from the two-dimensional qubit configuration model, and by rendering one or more quantum gates on the one or more qubit lines.

Techniques for forming quantum circuits, including connections between components of quantum circuits, are presented. A trench can be formed in a dielectric material, by removing a portion of the dielectric material and a portion of conductive material layered on top of the dielectric material, to enable creation of circuit components of a circuit. The trench can define a regular nub or compensated nub to facilitate creating electrical leads connected to the circuit components on a nub. The compensated nub can comprise recessed regions to facilitate depositing material during evaporation to form the leads. For compensated nub implementation, material can be evaporated in two directions, with oxidation performed in between such evaporations, to contact leads and form a Josephson junction. For regular nub implementation, material can be evaporated in four directions, with oxidation performed in between the third and fourth evaporations, to contact leads and form a Josephson junction.

Techniques for forming quantum circuits, including connections between components of quantum circuits, are presented. A trench can be formed in a dielectric material, by removing a portion of the dielectric material and a portion of conductive material layered on top of the dielectric material, to enable creation of circuit components of a circuit. The trench can define a regular nub or compensated nub to facilitate creating electrical leads connected to the circuit components on a nub. The compensated nub can comprise recessed regions to facilitate depositing material during evaporation to form the leads. For compensated nub implementation, material can be evaporated in two directions, with oxidation performed in between such evaporations, to contact leads and form a Josephson junction. For regular nub implementation, material can be evaporated in four directions, with oxidation performed in between the third and fourth evaporations, to contact leads and form a Josephson junction.

The disclosure describes the implementation of automated techniques for optimizing quantum circuits of the size and type expected in quantum computations that outperform classical computers. The disclosure shows how to handle continuous gate parameters and report a collection of fast algorithms capable of optimizing large-scale-scale quantum circuits. For the suite of benchmarks considered, the techniques described obtain substantial reductions in gate counts. In particular, the techniques in this disclosure provide better optimization in significantly less time than previous approaches, while making minimal structural changes so as to preserve the basic layout of the underlying quantum algorithms. The results provided by these techniques help bridge the gap between computations that can be run on existing quantum computing hardware and more advanced computations that are more challenging to implement in quantum computing hardware but are the ones that are expected to outperform what can be achieved with classical computers.

The disclosure describes the implementation of automated techniques for optimizing quantum circuits of the size and type expected in quantum computations that outperform classical computers. The disclosure shows how to handle continuous gate parameters and report a collection of fast algorithms capable of optimizing large-scale-scale quantum circuits. For the suite of benchmarks considered, the techniques described obtain substantial reductions in gate counts. In particular, the techniques in this disclosure provide better optimization in significantly less time than previous approaches, while making minimal structural changes so as to preserve the basic layout of the underlying quantum algorithms. The results provided by these techniques help bridge the gap between computations that can be run on existing quantum computing hardware and more advanced computations that are more challenging to implement in quantum computing hardware but are the ones that are expected to outperform what can be achieved with classical computers.