Patent classifications
H01L49/00
FABRICATION OF CORRELATED ELECTRON MATERIAL DEVICES METHOD TO CONTROL CARBON
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
Plasmonic graphene and method of making the same
Plasmonic graphene is fabricated using thermally assisted self-assembly of plasmonic nanostructure on graphene. Silver nanostructures were deposited on graphene as an example.
Photoelectric conversion element and photovoltaic cell
A photoelectric conversion element includes a ferroelectric layer; a first electrode and a second electrode provided on a surface or a surface layer portion of the ferroelectric layer; a common electrode provided on a surface or a surface layer portion of an opposite side to a side of the ferroelectric layer on which the first electrode and the second electrode are provided; and a pair of lead-out electrodes extracting electric power from the ferroelectric layer, in which the first electrode and the second electrode are arranged alternately in a predetermined direction.
Tunable Near-Infrared Emitters and Methods
The present invention relates to near-infrared quantum emitters, and in particular carbon nanostructures with chemically incorporated fluorescent defects, and methods of synthesizing near-infrared emitting nanostructures.
Radiation source and method for the operation thereof
The invention relates to a radiation source, comprising at least one semiconductor substrate, on which at least two field-effect transistors are formed, which each contain a gate electrode, a source contact, and a drain contact, which bound a channel, wherein the at least two field-effect transistors are arranged adjacent to each other on the substrate, wherein each field-effect transistor has exactly one gate electrode and at least one source contact and/or at least one drain contact is arranged between two adjacent gate electrodes, wherein a ballistic electron transport can be formed in the channel during operation of the radiation source. The invention further relates to a method for producing electromagnetic radiation having a vacuum wavelength between approximately 10 μm and approximately 1 mm.
SYSTEM, METHOD AND CONTAINER DELIVERY SYSTEM FOR MANIPULATING THE FUNCTIONING OF A TARGET
A system, method, diagnostic and container delivery system for manipulating a target, by manipulating with the quantum coherence of the target. The method includes identifying intrinsic parameters of the target and determining target-tuned design factors based at least partially on the intrinsic parameters. Target-tuned electrons and fields are generated based in part on the target-tuned design factor. The target-tuned electrons and fields are defined by discrete quantized energy levels. The method may include preparing a container to carry the unquantized target-tuned electrons, the container being composed of superconductor quantum dots. The unquantized target-tuned electrons are transferred to the container to form target-tuned artificial atoms having quantized target-tuned electrons, which may be delivered to the target as a manipulating agent. Alternatively, the unquantized target-tuned electrons may be delivered directly to the subject.
SECONDARY BATTERY AND METHOD OF MANUFACTURING THE SAME
A technique for improving the performance of a secondary battery is provided. A secondary battery according to an embodiment includes a first electrode, a second electrode, a first layer disposed on the first electrode, and including a first n-type oxide semiconductor, a second layer disposed on the first layer and including a second n-type oxide semiconductor material and a first insulating material, a third layer disposed on the second layer and including tantalum oxide, and a fourth layer disposed on the third layer and including a second insulating material.
Tunable Adsorption and Wetting
A device having a semiconductor nanomaterial surface, formed on a dielectric layer, having a conductive material under the dielectric layer, wherein a potential across the dielectric modified an absorption property of the semiconductor nanomaterial. A method of controlling a property of surface is provided, comprising: providing a device having a semiconductor nanomaterial having the surface, formed on a dielectric layer, having a conductive material under the dielectric layer; and controlling an electrostatic field at the semiconductor nanomaterial to modify at least one property of the surface with respect to molecules. The property may be absorption or wetting, for example.
BRIGHT ENTANGLED PHOTON SOURCES
The generation of entangled photons is provided by two-photon emission by an emission center immersed in an optical microcavity (MC). The MC is designed to reduce or to suppress the emission of single photons at the fundamental emission wavelength (λ.sub.g) of the emitter and increase the emission for the two-photon emission wavelength (2λ.sub.g). A reflector is added only to reflect single photons and will not reflect the biphotons.
ARCHITECTURES FOR QUANTUM INFORMATION PROCESSING
A device for quantum information processing is disclosed herein. According to examples, the device comprises a first plurality of confinement regions for confining spinful charge carriers for use as data qudits. The device further comprises a second plurality of confinement regions for confining spinful charge carriers for use as ancillary qudits, each confinement region of the second plurality of confinement regions couplable to measurement apparatus for measuring an ancillary qudit. The device further comprises a third plurality of confinement regions for confining spinful charge carriers, each confinement region of the third plurality of confinement regions situated between a first confinement region of the first plurality of confinement regions and a second confinement region of the second plurality of confinement regions and for use in mediating interactions between a data qudit of the first confinement region and an ancillary qudit of the second confinement region. The device further comprises one or more charge reservoirs. Each confinement region of the third plurality of confinement regions is couplable to a charge reservoir of the one or more charge reservoirs. Methods for operating a device for quantum information processing, and computer-readable media, are also described herein.