In one embodiment, a transducer comprises a first piezoelectric stack comprising a piezoelectric material; a first layer in contact with the piezoelectric stack; and a base structure beneath the first layer. The first layer has a first displacement between a first portion of the base structure and the first layer, and the first displacement is configurable by a first bias voltage received by the transducer.

A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.

Provided is an actuator including a piezoelectric element capable of satisfying three of a large amplitude, a high resonance frequency, and a large generated force. Actuator (100) is a drive source having a cantilever structure in which one end is a fixed end and the other end is displaced, and includes first piezoelectric body (110), second piezoelectric body (120), and shim member base (130) disposed between first piezoelectric body (110) and second piezoelectric body (120). In first piezoelectric body (110) and second piezoelectric body (120), piezoelectric body removal parts (110a) and (120a) are formed.

The vibration apparatus may include a vibration generating portion including a first vibration portion and a second vibration portion overlapping the first vibration portion, a first cover member at a first surface of the vibration generating portion, a second cover member at a second surface different from the first surface of the vibration generating portion, and a signal cable including first, second and third signal lines connected to the first vibration portion and the second vibration portion and disposed between the first cover member and the second cover member. An apparatus for vibration may include a passive vibration member and the vibration apparatus.

A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.

A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.

The invention relates to a tunable lens where the optical power can be adjusted. The lens consists of a deformable, non-fluid lens body sandwiched between a thin, flexible membrane and transparent back window, and an actuator system serving to change the overall shape of the membrane and lens body. The membrane is pre-shaped to have a Sag or Sagittal of at least 10 μm so that the lens has a non-zero optical power when the actuator system is not activated. In order to achieve a large optical power range for the lens, the membrane should preferably be made of a material having a Young's modulus in the range 2-1.000 MPa.

A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

A device for measuring a concentration of a component in a target sample includes a flow chamber with a first channel that receives a reference sample having a known concentration of the component. The flow chamber also includes a second channel that receives the target sample having an unknown concentration of the component. A pump operates to pump the reference sample and the target sample at a same volume flow rate through the first and second channels, respectively. A thermal mass flow meter measures a thermal conductivity of the reference sample, a thermal conductivity of the target sample, or both.