A collimator for x-ray, gamma, or particle radiation has a plurality of collimator elements made of a tungsten-containing material to reduce scattered radiation. At least one collimator element consists of a tungsten alloy having a tungsten content of 72 to 98 wt.-%, which contains 1 to 14 wt.-% of at least one metal of the group Mo, Ta, Nb and 1 to 14 wt.-% of at least one metal of the group Fe, Ni, Co, Cu. The collimator also has very homogeneous absorption behavior at very thin wall thicknesses of the collimator elements.

Disclosed is a method for preparing vanadium or vanadium alloy powder from a vanadium-containing raw material through a shortened process, including: calcinating a mixture of a vanadium-containing raw material and an alkali compound for oxidation to form a water-soluble vanadate; purifying the vanadate followed by vanadium precipitation to produce an intermediate CaV.sub.2O.sub.6 with high purity; dissolving CaV.sub.2O.sub.6 in a molten-salt medium together with other raw materials to form a uniform reaction system; and introducing a reducing agent to the system followed by separation, washing and drying to produce vanadium or vanadium alloy powder having a particle size of 50-800 nm and a purity of 99.0 wt % or more. The method can continuously process vanadium-containing raw materials to prepare vanadium or vanadium alloy powder.

Provided is a tungsten sintered compact sputtering target containing iron as an impurity in an amount of 0.8 wtppm or less, and remainder being tungsten and other unavoidable impurities, wherein a range of iron concentration in a target structure is within a range of ±0.1 wtppm of an average concentration. Additionally provided is a tungsten sintered compact sputtering target, wherein a relative density of the target is 99% or higher, an average crystal grain size is 50 μm or less, and a crystal grain size range is 5 to 200 μm. The present invention aims to inhibit abnormal grain growth in the tungsten target by reducing the amount of iron in the tungsten sintered compact sputtering target.

A method for preparing a tantalum power of capacitor grade, comprising: solid tantalum nitride is added when potassium fluotantalate is reduced by sodium. The method increases the nitrogen content in the tantalum powder, and at the same time improves the electrical performance of the tantalum powder. The specific capacitance is increased, and the leakage current and loss is improved. The qualification rate of the anode and the capacitor product is also improved. The method is characterized in that the nitrogen in the tantalum nitride diffuses between the particles of the tantalum powder, with substantially no loss, and thus the nitrogen content is accurate and controllable.

A metallization for a thin-film component includes at least one layer composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a metallization includes providing at least one sputtering target, depositing at least one layer of an Mo-based alloy containing Al and Ti and usual impurities, and structuring the metallization by using at least one photolithographic process and at least one subsequent etching step. A sputtering target is composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a sputtering target composed of an Mo-based alloy includes providing a powder mixture containing Mo and also Al and Ti and cold gas spraying (CGS) of the powder mixture onto a suitable support material.

A titanium-tantalum alloy having a titanium wt % ranging from 10% to 70% and wherein the titanium has a body centered cubic structure. A method of forming a titanium-tantalum alloy, the method comprising the steps of: (a) slicing a 3D CAD model of a part to be formed into a plurality of 2D image layers; (b) preparing a homogenous powder mixture of titanium powder and tantalum powder; (c) dispensing a layer of the powder mixture onto a processing bed; (d) performing powder bed fusion of the layer of the powder mixture according to one of the 2D image layers in one of: a vacuum environment and an inert gas environment; and performing steps (c) and (d) for each of the plurality of 2D image layers in succession.

A composite metal where a phase of particles of solid solution is uniformly dispersed in a Cu phase, the solid solution containing a solid solution of a heat resistant element selected from Mo, W, Ta, Nb, V and Zr and Cr. The composite metal is provided to contain: 20-70% of Cu; 1.5-64% of Cr; and 6-76% of a heat resistant element by weight relative to the composite metal, wherein a remainder is comprised of inevitable impurities. In the composite metal, the particles of the solid solution, contained in the composite metal, are provided to have an average particle diameter of not larger than 20 μm and to uniformly disperse in the Cu phase with an index of the dispersion state of not higher than 1.0.

Methods for forming an electrode for use in forming a honeycomb extrusion die. The method includes forming, by means of an additive manufacturing process, an electrode includes a base having a web extending from the base. The web defines a matrix of cellular openings. The method further includes forming a secondary electrode having a plurality of pins. The plurality of pins are shaped and arranged so as to mate with the matrix of cellular openings defined by the web of the electrode. The method further includes machining the electrode using the secondary electrode to smooth surfaces of the electrode formed by the additive manufacturing process.

Methods for forming an electrode for use in forming a honeycomb extrusion die. The method includes forming, by means of an additive manufacturing process, an electrode includes a base having a web extending from the base. The web defines a matrix of cellular openings. The method further includes forming a secondary electrode having a plurality of pins. The plurality of pins are shaped and arranged so as to mate with the matrix of cellular openings defined by the web of the electrode. The method further includes machining the electrode using the secondary electrode to smooth surfaces of the electrode formed by the additive manufacturing process.

A catalyst used for dehydrogenation of an organic hydrogen-storage material to generate hydrogen, a support for the catalyst, and a preparation process thereof are presented. A hydrogen-storage alloy and a preparation process thereof are also provided. A process for providing high-purity hydrogen, a high-efficiently distributed process for producing high-purity and high-pressure hydrogen, a system for providing high-purity and high-pressure hydrogen, a mobile hydrogen supply system, and a distributed hydrogen supply apparatus are also described.