A method for producing a catalyst system for gas reactions comprising at least one planar structure of noble metal having gas-permeable openings, comprising the steps of:

(1) providing at least one noble metal powder consisting of at least substantially spherical noble metal particles, and

(2) repeatedly applying the noble metal powder or powders provided in step (1) in layers to a substrate in a build chamber, respectively followed by an at least partial melting of the respective noble metal powder applied as a layer with high-energy radiation, and allowing the melted noble metal powder to solidify within the scope of additive manufacturing.

A method for producing a catalyst system for gas reactions comprising at least one planar structure of noble metal having gas-permeable openings, comprising the steps of:

(1) providing at least one noble metal powder consisting of at least substantially spherical noble metal particles, and

(2) repeatedly applying the noble metal powder or powders provided in step (1) in layers to a substrate in a build chamber, respectively followed by an at least partial melting of the respective noble metal powder applied as a layer with high-energy radiation, and allowing the melted noble metal powder to solidify within the scope of additive manufacturing.

Discussed is a paste composition for an electrode of a solar cell, the paste including a conductive powder, an organic vehicle, and an inorganic composition formed by including a plurality of metal compounds including a gallium compound including gallium as a component of a main network former of the inorganic composition.

Discussed is a paste composition for an electrode of a solar cell, the paste including a conductive powder, an organic vehicle, and an inorganic composition formed by including a plurality of metal compounds including a gallium compound including gallium as a component of a main network former of the inorganic composition.

A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.

A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.

A sintering composition, consisting essentially of: a solvent; and a metal complex dissolved in the solvent, wherein: the sintering composition contains at least 60 wt. % of the metal complex, based on the total weight of the sintering composition; and the sintering composition contains at least 20 wt. % of the metal of the metal complex, based on the total weight of the sintering composition.

A method for manufacturing a part by alloying a precious metal with boron, wherein: a quantity of precious metal reduced to powder form is provided; a quantity of a nano-structured micrometric boron powder is provided; the precious metal powder is mixed with the nano-structured micrometric boron powder to obtain a mixture; the mixture is compacted by applying a uniaxial pressure; the mixture is subjected to a spark plasma sintering or flash sintering treatment, or to a hot isostatic pressing (HIP) treatment, to obtain an ingot of a precious metal/boron alloy, and the ingot is machined to obtain the part, or the ingot is reduced to powder form by a micronisation treatment and the powder is treated to obtain the part. Additionally, a gold/boron alloy.

Proposed is an iridium alloy catalyst having reversible catalytic activity for an oxygen evolution reaction (OER), a hydrogen evolution reaction (HER), and a hydrogen oxidation reaction (HOR) by including an iridium alloy including iridium (Ir) and nickel (Ni). The iridium alloy catalyst according to the present disclosure is rapidly converted to an iridium alloy catalyst in an oxide form and an iridium alloy catalyst in a metallic form according to applied voltage by controlling its crystallinity. Thus, even in case an oxide layer is formed after the OER, the oxidation layer disappears during the HER and HOR and the properties of an iridium metal catalyst remain, thereby maintaining HER/HOR performance.

A noble metal fine particle herein disclosed includes a noble metal element as a main constituent metal element. An imine compound is held on a surface, and an amine/imine ratio (A/I ratio) of an area ratio of a peak area of the imine compound and a peak area of an amine compound determined in pyrolysis GCMS analysis with a pyrolysis temperature of 300° C. is 1 or less.