C22C1/0483

Negative Electrode Active Material for Electric Device and Electric Device Using the Same

A negative electrode active material for electric device is used which includes a silicon-containing alloy having a structure in which a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component and a predetermined composition and in which a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a (111) plane of Si in a range of 2θ=24 to 33° is 0.41 or more in an X-ray diffraction measurement of the silicon-containing alloy using a CuKα1 ray.

Electric Device

In an electric device the negative electrode active material layer includes a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component, a predetermined composition, and a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a (111) plane of Si in a range of 2θ=24 to 33° in a predetermined range in an X-ray diffraction measurement using a CuKα1 ray is used as a Si-containing alloy. A solid solution or an oxide-coated solid solution in which a coating layer containing an oxide in a predetermined amount is formed on the particle surface of the solid solution and is used in the positive electrode active material layer.

System and method for manufacture of undercooled metallic core-shell particles
11673190 · 2023-06-13 · ·

A system and method are presented for producing metallic core-shell particles. The system includes the housing having a hollow interior configured to receive and hold a molten metal input, a carrier fluid, and one or more reagents. The system also includes a shearing assembly positioned within the hollow interior of the housing. The shearing assembly is configured to, when the molten metal input, carrier fluid, and one or more reagents are held withing hollow interior and sealed within housing, shear the molten metal input into particles of an effective size so that a shell created on a surface of the particles via reaction with the one or more reagents prevents a core of the particles from solidifying when the particles are cooled to a temperature below a freezing temperature of the molten metal input.

WINDOW GLASS STRUCTURE FOR VEHICLE

A window glass structure according to one aspect of the present invention includes a window glass for a vehicle that has a surface provided with a conductive layer having a predetermined pattern, and a connection terminal that is soldered to the conductive layer. The connection terminal includes a first joining portion that is joined to the conductive layer by soldering using a lead-free solder, a first side plate that is linked to the first joining portion and extends in a direction of separation from the surface of the window glass, a second joining portion that is joined to the conductive layer by soldering using a lead-free solder, a second side plate that is linked to the second joining portion and extends in a direction of separation from the surface of the window glass, a bridge portion that extends so as to link the two side plates, and a terminal portion configured to be linked to the bridge portion so as to have a face that is oriented in a direction different from directions in which faces of the two side plates and the bridge portion are oriented, at a position separated from regions to which the first side plate and the second side plate are linked.

METHOD FOR PRODUCING A THERMOELECTRIC MATERIAL

A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.

P-TYPE THERMOELECTRIC MATERIAL, THERMOELECTRIC ELEMENT AND METHOD FOR PRODUCING P-TYPE THERMOELECTRIC MATERIAL
20170301845 · 2017-10-19 ·

A p-type thermoelectric material according to one aspect of the present invention is configured such that at least any one of a Mg site, a Si site, a Sn site and/or a Ge site in a compound composed of magnesium (Mg), silicon (Si), tin (Sn) and germanium (Ge) is substituted with any one or more elements selected from the group consisting of alkali metals of group 1A and gold (Au), silver (Ag), copper (Cu), zinc (Zn), calcium (Ca) and gallium (Ga) of group 1B.

P-TYPE THERMOELECTRIC MATERIAL, THERMOELECTRIC ELEMENT AND METHOD FOR PRODUCING P-TYPE THERMOELECTRIC MATERIAL
20170301845 · 2017-10-19 ·

A p-type thermoelectric material according to one aspect of the present invention is configured such that at least any one of a Mg site, a Si site, a Sn site and/or a Ge site in a compound composed of magnesium (Mg), silicon (Si), tin (Sn) and germanium (Ge) is substituted with any one or more elements selected from the group consisting of alkali metals of group 1A and gold (Au), silver (Ag), copper (Cu), zinc (Zn), calcium (Ca) and gallium (Ga) of group 1B.

SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME
20170298499 · 2017-10-19 ·

A sputtering target, which has a component composition including: 30.0-67.0 atomic % of Ga; and the Cu balance containing inevitable impurities, wherein the sputtering target is a sintered material having a structure in which θ phases made of Cu—Ga alloy are dispersed in a matrix of the γ phases made of Cu—Ga alloy, is provided.

Indirect additive manufacturing process using amine-containing adhesive polymers

A method for binder jetting additive manufacturing of an object, the method comprising: (i) separately feeding a powder from which said object is to be manufactured and a solution comprising an adhesive polymer dissolved in a solvent into an additive manufacturing device, wherein said adhesive polymer is an amine-containing polymer having a molecular weight of at least 200 g/mole and is present in said solution in a concentration of 1-30 wt % to result in said solution having a viscosity of 2-25 mPa.Math.s and a surface tension of 25-45 mN/m at room temperature; and (ii) dispensing selectively positioned droplets of said adhesive polymer, from a printhead of said additive manufacturing device, into a bed of said powder to bind particles of said powder with said adhesive polymer to produce a preform having a shape of the object to be manufactured.

ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT

One aspect of the present invention is a method for manufacturing an electronic component, the method including: a first step of applying a metal paste containing metal particles onto a polymer compact in a prescribed pattern to form a metal paste layer; a second step of sintering the metal particles to form metal wiring; a third step of applying a solder paste containing solder particles and a resin component onto the metal wiring to form a solder paste layer; a fourth step of disposing an electronic element on the solder paste layer; and a fifth step of heating the solder paste layer so as to form a solder layer bonding the metal wiring and the electronic element, and so as to form a resin layer covering at least a portion of the solder layer.