Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi.sub.2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSi.sub.x with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 m.sup.2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.