This invention relates to an antimicrobial product containing silver-copper particles and its preparation method. The product includes a substrate and positively charged silver particles with a particle size of 15 μm to 50 μm, and a positively charged copper particle with a particle size of 10 μm to 50 μm, wherein the copper particle size ratio to the silver particle is 0.8 to 1.2. The silver particle, the copper particle and the substrate are combined by means of semi-fused sintering, wherein the ratio of the silver particle to the copper particle is 40:60 to 95:5. The sum of the substrate, the silver particles and the total particles of the copper particles is less than or equal to 10%.

This invention relates to an antimicrobial product containing silver-copper particles and its preparation method. The product includes a substrate and positively charged silver particles with a particle size of 15 μm to 50 μm, and a positively charged copper particle with a particle size of 10 μm to 50 μm, wherein the copper particle size ratio to the silver particle is 0.8 to 1.2. The silver particle, the copper particle and the substrate are combined by means of semi-fused sintering, wherein the ratio of the silver particle to the copper particle is 40:60 to 95:5. The sum of the substrate, the silver particles and the total particles of the copper particles is less than or equal to 10%.

A device including a hard shield material; a layer including aluminum or copper; and a silicon layer having a first thickness is disclosed. The device can also include a silicon layer having a second thickness. A method of making the device is also disclosed.

A device including a hard shield material; a layer including aluminum or copper; and a silicon layer having a first thickness is disclosed. The device can also include a silicon layer having a second thickness. A method of making the device is also disclosed.

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer located on the base material. The base material includes a first surface, a second surface, and at least one hole extending through the first and second surfaces. The at least one hole includes a first, a second and a third hole part. The first hole part is continuous with the first surface and is oblique. The second hole part is between the second surface and the first hole part. The third hole part is between the first hole part and the second hole part and is oblique. The ceramic layer includes a first part located on the first surface and a second part located on the first hole part.

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer located on the base material. The base material includes a first surface, a second surface, and at least one hole extending through the first and second surfaces. The at least one hole includes a first, a second and a third hole part. The first hole part is continuous with the first surface and is oblique. The second hole part is between the second surface and the first hole part. The third hole part is between the first hole part and the second hole part and is oblique. The ceramic layer includes a first part located on the first surface and a second part located on the first hole part.

This invention relates to a thin and texturized film that can be applied onto a non-smooth surface to improve hardness, corrosion resistance and wear resistance properties of the surface while maintaining the underlying profile of the non-smooth surface. An additive overlaying process can be employed to produce the thin and texturized film on the non-smooth surfaces without substantial alteration or degradation of the underlying surface texture or profile of the non-smooth surfaces so as to sufficiently preserve the underlying surface texture or profile. The thin and texturized film fully covers the non-smooth in a uniform manner and maintains the surface profile.

A component for use in a plasma processing apparatus, which is to be exposed to a plasma, includes a base material, an alumite layer and a thermally sprayed film. The base material has a plurality of through holes and a rough surface at which one end of each of the through holes is opended. The alumite layer is formed on a surface of the base material having the rough surface by an anodic oxidation process. The thermally sprayed film is formed on the rough surface with the alumite layer therebetween.

A component for use in a plasma processing apparatus, which is to be exposed to a plasma, includes a base material, an alumite layer and a thermally sprayed film. The base material has a plurality of through holes and a rough surface at which one end of each of the through holes is opended. The alumite layer is formed on a surface of the base material having the rough surface by an anodic oxidation process. The thermally sprayed film is formed on the rough surface with the alumite layer therebetween.

A composite structure with an aluminum-based alloy layer containing boron carbide and a manufacturing method thereof are provided. The composite structure includes a substrate with an open hole in that surface and the aluminum-based alloy layer containing boron carbide. The aluminum-based alloy layer is disposed in the open hole and contains aluminum, boron, carbon, and oxygen, wherein the content of aluminum is between 4 at. % and 55 at. %, the content of boron is between 9 at. % and 32 at. %, the content of carbon is between 13 at. % and 32 at. %, the content of oxygen is between 2 at. % and 38 at. %, and the ratio of the content of boron to carbon is between 0.3 and 2.7.