A method for providing a surface finish to a metal part includes both diffusion hardening a metal surface to form a diffusion-hardened layer, and oxidizing the diffusion-hardened layer to create an oxide coating thereon. The diffusion-hardened layer can be harder than an internal region of the metal part and might be ceramic, and the oxide coating can have a color that is different from the metal or ceramic, the color being unachievable only by diffusion hardening or only by oxidizing. The metal can be titanium or titanium alloy, the diffusion hardening can include carburizing or nitriding, and the oxidizing can include electrochemical oxidization. The oxide layer thickness can be controlled via the amount of voltage applied during oxidation, with the oxide coating color being a function of thickness. An enhanced hardness profile can extend to a depth of at least 20 microns below the top of the oxide coating.

A novel dual layer mask formulation is provided. In particular, the mask has a unique composition that protects the integrity of an underlying chromide coating, prevents chromium depletion from the chromide coating and prevents a subsequent aluminide coating from being deposited thereon.

A novel dual layer mask formulation is provided. In particular, the mask has a unique composition that protects the integrity of an underlying chromide coating, prevents chromium depletion from the chromide coating and prevents a subsequent aluminide coating from being deposited thereon.

A film growth apparatus (e.g., a nitridation apparatus) includes a processing chamber, a substrate holder disposed in the processing chamber, an energy source coupled to the processing chamber, and one or more gas inlets fluidically coupled to the processing chamber. The substrate holder is configured to support a substrate (e.g., a silicon substrate) maintained at a temperature less than about 400 C. The energy source is configured to treat an unreactive surface of the substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux. The one or more gas inlets are configured to convert (e.g., nitridate) the reactive surface using a gas (e.g., nitrogen-based gas) without generating plasma by converting the reactive surface to a film (e.g., a nitride layer) comprising a subsequent unreactive surface.

A method of reducing the formation of electrically resistive scale on a an article comprising a silicon-containing ferritic stainless subjected to oxidizing conditions in service includes, prior to placing the article in service, subjecting the article to conditions under which silica, which includes silicon derived from the steel, forms on a surface of the steel. Optionally, at least a portion of the silica is removed from the surface to placing the article in service. A ferritic stainless steel alloy having a reduced tendency to form silica on at least a surface thereof also is provided. The steel includes a near-surface region that has been depleted of silicon relative to a remainder of the steel.

A method of reducing the formation of electrically resistive scale on a an article comprising a silicon-containing ferritic stainless subjected to oxidizing conditions in service includes, prior to placing the article in service, subjecting the article to conditions under which silica, which includes silicon derived from the steel, forms on a surface of the steel. Optionally, at least a portion of the silica is removed from the surface to placing the article in service. A ferritic stainless steel alloy having a reduced tendency to form silica on at least a surface thereof also is provided. The steel includes a near-surface region that has been depleted of silicon relative to a remainder of the steel.

A cutting tool comprises a base including a hard alloy and a coating layer located on a surface of the base, wherein the coating layer comprises at least one TiCN layer, an Al.sub.2O.sub.3 layer and an outermost layer which are laminated in order from a side of the base, and a content of Cl at a thickness-center position of the TiCN layer is higher than a content of Cl at a thickness-center position of the outermost layer and the content of Cl at the thickness-center position of the outermost layer is higher than a content of Cl at a thickness-center position of the Al.sub.2O.sub.3 layer in a glow-discharge emission spectrometry (GDS analysis).

A method for low-temperature interstitial case formation on a self-passivating metal workpiece includes exposing the workpiece in a heated gaseous environment comprising oxygen to pyrolysis products of a nonpolymeric reagent comprising nitrogen and carbon.

A method includes forming a metal fill material on at least one electrical connection formed in a feature formed within a dielectric layer of a semiconductor device structure. The metal fill material partially fills the feature, the partially filled feature comprises the metal fill material and an exposed first portion of a sidewall of the feature that comprises the material of the dielectric layer, and a gap region formed between a second portion of the sidewall and a sidewall of the metal fill material, and performing a soaking process on the semiconductor device structure to form a passivation layer over a surface of the metal fill material and including a portion of the metal fill material disposed within the gap.

A method includes forming a metal fill material on at least one electrical connection formed in a feature formed within a dielectric layer of a semiconductor device structure. The metal fill material partially fills the feature, the partially filled feature comprises the metal fill material and an exposed first portion of a sidewall of the feature that comprises the material of the dielectric layer, and a gap region formed between a second portion of the sidewall and a sidewall of the metal fill material, and performing a soaking process on the semiconductor device structure to form a passivation layer over a surface of the metal fill material and including a portion of the metal fill material disposed within the gap.