Disclosed are a processing method for fluorination of a fluorination-target component, which may realize high density and high strength by forming a fluoride coating based on atmospheric pressure high-frequency plasma on various components for semiconductor processes and, at the same time, may significantly increase productivity, and in particular, may ensure normal etch rate in a large-area semiconductor fabrication system, and a fluorinated component obtained by the method.

Disclosed are a processing method for fluorination of a fluorination-target component, which may realize high density and high strength by forming a fluoride coating based on atmospheric pressure high-frequency plasma on various components for semiconductor processes and, at the same time, may significantly increase productivity, and in particular, may ensure normal etch rate in a large-area semiconductor fabrication system, and a fluorinated component obtained by the method.

Provided is a method for preparing metallic titanium by anode-electrolysis of carbonized/sulfurized ilmenite, and relates to the technical field of mineral processing and electrochemical extraction of metallic titanium in molten salts in non-ferrous metallurgy. The method uses titanium-containing ore, carbon (C) and sulfur (S) as raw materials and prepares a Ti—C—S/titanium sulfide anode material with high electric conductivity through a sintering reaction, and then uses the Ti—C—S/titanium sulfide anode to prepare metallic titanium in a molten salt electrolyte system successfully. With the Ti—C—S composite soluble anode in the present invention, metallic titanium is deposited at the cathode and CS.sub.2/S.sub.2 gas is generated at the anode in the molten salt electrolysis process; in addition, the gas can be used as a raw material to effectively treat the ore to prepare titanium sulfide.

Provided is a method for preparing metallic titanium by anode-electrolysis of carbonized/sulfurized ilmenite, and relates to the technical field of mineral processing and electrochemical extraction of metallic titanium in molten salts in non-ferrous metallurgy. The method uses titanium-containing ore, carbon (C) and sulfur (S) as raw materials and prepares a Ti—C—S/titanium sulfide anode material with high electric conductivity through a sintering reaction, and then uses the Ti—C—S/titanium sulfide anode to prepare metallic titanium in a molten salt electrolyte system successfully. With the Ti—C—S composite soluble anode in the present invention, metallic titanium is deposited at the cathode and CS.sub.2/S.sub.2 gas is generated at the anode in the molten salt electrolysis process; in addition, the gas can be used as a raw material to effectively treat the ore to prepare titanium sulfide.

Artificial lift pump components such as couplings are disclosed, all having a body formed from a selected material, the body having an inner diameter and an outer diameter, a first surface treatment introducing carbon, nitrogen, boron into the material to form a first and hard layer, and a second layer defined as an deposited coating to the first layer that is also made of a carbon, nitrogen, or boron and is further characterized as being ceramic like (hard) and having a low-friction.

Artificial lift pump components such as couplings are disclosed, all having a body formed from a selected material, the body having an inner diameter and an outer diameter, a first surface treatment introducing carbon, nitrogen, boron into the material to form a first and hard layer, and a second layer defined as an deposited coating to the first layer that is also made of a carbon, nitrogen, or boron and is further characterized as being ceramic like (hard) and having a low-friction.

A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: treating an unreactive surface of a substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux, and nitridating the reactive surface using a nitrogen-based gas to convert the reactive surface to a nitride layer including a subsequent unreactive surface.

A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: directing an energy flux to a localized region of an unreactive surface of a substrate to convert the localized region of the unreactive surface to a localized reactive region: and selectively nitridating the localized reactive region using a nitrogen-based gas to convert the localized reactive region to a nitride layer.

A method for fabricating an article includes forming a billet consisting essentially of a stainless steel composition of manganese 2.00 wt. %-24.00 wt. % chromium 19.00 wt. %-30 wt. % molybdenum 0.50 wt. %-4.0 wt. % nitrogen 0.25 wt. %-1.10 wt. % carbon ≤1 wt. % phosphorus ≤0.03 wt. % sulfur ≤1 wt. % nickel <22 wt. % cobalt <0.10 wt. % silicon ≤1 wt. % niobium ≤0.80 wt. % oxygen ≤1 wt. % copper ≤0.25 wt. % balance iron.
The billet is annealed and cold worked to form an article. Without annealing of the article, the article is subsequently case hardened at a single case hardening temperature to form a surface layer on a top surface thereof. Articles formed with the indicated stainless steel composition with case hardened surface layers are also provided.

Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the, cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.