A method for treating a workpiece made of self-passivating metal and having a Beilby layer including applying a coating to a surface of the workpiece, the coating including a reagent, treating the coating to thermally alter the reagent, wherein the thermal altering of the reagent activates and/or hardens the surface.

A novel dual layer mask formulation is provided. In particular, the mask has a unique composition that protects the integrity of an underlying chromide coating, prevents chromium depletion from the chromide coating and prevents a subsequent aluminide coating from being deposited thereon.

A novel dual layer mask formulation is provided. In particular, the mask has a unique composition that protects the integrity of an underlying chromide coating, prevents chromium depletion from the chromide coating and prevents a subsequent aluminide coating from being deposited thereon.

Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.

Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.

A material at least partly coated with a passive film of fluoride formed by contact with a gas containing ClF.

A material at least partly coated with a passive film of fluoride formed by contact with a gas containing ClF.

The present invention relates to a method for producing an electrode for alkaline electrolysis based on a composition of sulfides on a Ni foam substrate. In a step. S2) there is performed a sulfiding on the Ni substrate. The step of sulfiding results in the formation of electrocatalytic active nano-sites with NiS compounds. It is found that these nano-sites are capable of reducing the so-called overpotential of the electrodes during alkaline water electrolysis, and the production of electrodes may be significantly simplified. In particular, already existing electrolyzer units may benefit from this invention by on-site application of the improved method.

The present invention relates to a method for producing an electrode for alkaline electrolysis based on a composition of sulfides on a Ni foam substrate. In a step. S2) there is performed a sulfiding on the Ni substrate. The step of sulfiding results in the formation of electrocatalytic active nano-sites with NiS compounds. It is found that these nano-sites are capable of reducing the so-called overpotential of the electrodes during alkaline water electrolysis, and the production of electrodes may be significantly simplified. In particular, already existing electrolyzer units may benefit from this invention by on-site application of the improved method.

A method for providing a surface finish to a metal part includes both diffusion hardening a metal surface to form a diffusion-hardened layer, and oxidizing the diffusion-hardened layer to create an oxide coating thereon. The diffusion-hardened layer can be harder than an internal region of the metal part and might be ceramic, and the oxide coating can have a color that is different from the metal or ceramic, the color being unachievable only by diffusion hardening or only by oxidizing. The metal can be titanium or titanium alloy, the diffusion hardening can include carburizing or nitriding, and the oxidizing can include electrochemical oxidization. The oxide layer thickness can be controlled via the amount of voltage applied during oxidation, with the oxide coating color being a function of thickness. An enhanced hardness profile can extend to a depth of at least 20 microns below the top of the oxide coating.