Patent classifications
C23C8/36
Ion implantation for superconductor tape fabrication
A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.
HIGH PRESSURE AMMONIA NITRIDATION OF TUNNEL OXIDE FOR 3DNAND APPLICATIONS
Embodiments disclosed herein generally related to system for forming a semiconductor structure. The processing chamber includes a chamber body, a substrate support device, a quartz envelope, one or more heating devices, a gas injection assembly, and a pump device. The chamber body defines an interior volume. The substrate support device is configured to support one or more substrates during processing. The quartz envelope is disposed in the processing chamber. The quartz envelope is configured to house the substrate support device. The heating devices are disposed about the quartz envelope. The gas injection assembly is coupled to the processing chamber. The gas injection assembly is configured to provide an NH.sub.3 gas to the interior volume of the processing chamber. The pump device is coupled to the processing chamber. The pump device is configured to maintain the processing chamber at a pressure of at least 10 atm.
HIGH PRESSURE AMMONIA NITRIDATION OF TUNNEL OXIDE FOR 3DNAND APPLICATIONS
Embodiments disclosed herein generally related to system for forming a semiconductor structure. The processing chamber includes a chamber body, a substrate support device, a quartz envelope, one or more heating devices, a gas injection assembly, and a pump device. The chamber body defines an interior volume. The substrate support device is configured to support one or more substrates during processing. The quartz envelope is disposed in the processing chamber. The quartz envelope is configured to house the substrate support device. The heating devices are disposed about the quartz envelope. The gas injection assembly is coupled to the processing chamber. The gas injection assembly is configured to provide an NH.sub.3 gas to the interior volume of the processing chamber. The pump device is coupled to the processing chamber. The pump device is configured to maintain the processing chamber at a pressure of at least 10 atm.
Deposition of silicon boron nitride films
Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.
Deposition of silicon boron nitride films
Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.
Method of making high critical temperature metal nitride layer
A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
Method of making corrosion resistant and glossy appearance coating for light metal workpiece
A metal workpiece, such as a wheel, and a method of providing an enhanced corrosion resistant surface coating on an exposed surface of a metal or alloy substrate (such as magnesium). A corrosion resistance basecoat is formed, including generating an oxide layer, and applying a first primer coating onto at least a portion of the oxide layer. The method may further include identifying highest corrosion prone areas on the substrate and designing a support rack that avoids contact with these corrosion prone areas. The method also includes forming a topcoat over at least a portion of the basecoat, by applying a second primer coating onto at least a portion of the first primer coating and depositing a sputtered metallic film onto the second primer coating using a physical vapor deposition technique. A clear coat layer may be applied over the metallic film.
Method of making corrosion resistant and glossy appearance coating for light metal workpiece
A metal workpiece, such as a wheel, and a method of providing an enhanced corrosion resistant surface coating on an exposed surface of a metal or alloy substrate (such as magnesium). A corrosion resistance basecoat is formed, including generating an oxide layer, and applying a first primer coating onto at least a portion of the oxide layer. The method may further include identifying highest corrosion prone areas on the substrate and designing a support rack that avoids contact with these corrosion prone areas. The method also includes forming a topcoat over at least a portion of the basecoat, by applying a second primer coating onto at least a portion of the first primer coating and depositing a sputtered metallic film onto the second primer coating using a physical vapor deposition technique. A clear coat layer may be applied over the metallic film.
Apparatus and method for depositing multiple coating materials in a common plasma coating zone
An apparatus and method for coating a substrate moved along a path of travel through the apparatus. A plasma source issues a plasma jet into which a first reagent is injected from a discharge orifice located upstream of the jet. A second reagent is injected into the jet from a discharge orifice located downstream of the jet. A controller is configured to regulate the flow of the first reagent according to a first set of parameters and regulate the flow of the second reagent according to a second set of parameters. As a result, the first and second reagents are applied to the substrate to form at least one layer of a coating on the substrate.
Apparatus and method for depositing multiple coating materials in a common plasma coating zone
An apparatus and method for coating a substrate moved along a path of travel through the apparatus. A plasma source issues a plasma jet into which a first reagent is injected from a discharge orifice located upstream of the jet. A second reagent is injected into the jet from a discharge orifice located downstream of the jet. A controller is configured to regulate the flow of the first reagent according to a first set of parameters and regulate the flow of the second reagent according to a second set of parameters. As a result, the first and second reagents are applied to the substrate to form at least one layer of a coating on the substrate.