A method is described herein for forming a high-capacity thin-film battery. The thin-film battery utilizes a cathode containing each of lithium, ruthenium, cobalt, and oxygen. The cathode composition is synthesized as a solution of LiRu.sub.2O.sub.3 and LiCoO.sub.2 and deposited on a substrate using a physical vapor deposition sputtering technique. The cathode is then covered by an electrolyte and an anode to form a thin film battery. The cathode within the resulting thin film battery may be as-deposited and without being annealed to have an amorphous composition, or the cathode may be annealed after depositing the cathode.

Embodiments are directed to a method of optimizing thickness of a target material film deposited on a semiconductor substrate in a semiconductor processing chamber, wherein the semiconductor processing chamber includes a magnetic assembly positioned on the semiconductor processing chamber, the magnetic assembly including a plurality of magnetic columns within the magnetic assembly. The method includes operating the semiconductor processing chamber to deposit a film of target material on a semiconductor substrate positioned within the semiconductor processing chamber, measuring an uniformity of the deposited film, adjusting a position of one or more magnetic columns in the magnetic assembly, and operating the semiconductor processing chamber to deposit the film of the target material after adjusting position of the one or more magnetic columns.

The present disclosure relates to a decoration element comprising a light reflective layer; a light absorbing layer provided on the light reflective layer; and a color developing layer comprising a color film provided on a surface opposite to the surface facing the light absorbing layer of the light reflective layer, between the light reflective layer and the light absorbing layer, or on a surface opposite to the surface facing the light reflective layer of the light absorbing layer.

Disclosed herein are systems and methods for physical vapor deposition silicon nitride coatings. The methods thereof may include a creating a magnetically confined plasma near a surface of a silicon nitride. The plasma may cause positively charged energetic ions from the plasma to collide with negatively charged silicon nitride atoms, causing the silicon nitride atoms to be sputtered and deposited on a substrate such as titanium. The silicon nitride coating may be nitrogen-rich silicon nitride or silicon-rich silicon nitride.

Multilayer metallo-dielectric energy control coatings are disclosed in which one or more layers are formed from a hydrogenated metal nitride dielectric, which may be hydrogenated during or after dielectric deposition. Properties of the multilayer coating may be configured by appropriately tuning the hydrogen concentration (and/or the spatial profile thereof) in one or more hydrogenated metal nitride dielectric layers. One or more metal layers of the multilayer coating may be formed on a hydrogenated nitride dielectric layer, thereby facilitating adhesion of the metal with a low percolation threshold and enabling the formation of thin metal layers that exhibit substantial transparency in the visible spectrum. Optical properties of the coating may be tuned through modulation of metal-dielectric interface roughness and dispersion of metal nanoparticles in the dielectric layer. Electrical busbars and micro-nano electrical grids may be integrated with one or more metal layers to provide functionality such as de-icing and defogging.

A decorative member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on a surface of the color developing layer. The substrate comprises a pattern layer, and the light absorbing layer comprises silicon (Si).

A coating includes a first base layer including a nitride of at least Al and Cr, a second base layer including a nitride of at least Al and Cr overlying the first base layer, and an outermost indicator layer overlying the second base layer. The first base layer has a positive residual compressive stress gradient. The second base layer has substantially constant residual compressive stresses. The outermost indicator layer includes a nitride of Si and Me, wherein Me is at least one of Ti, Zr, Hf, and Cr. The outermost indicator layer has residual compressive stresses that are less than the residual compressive stresses of the second base layer.

Provided is a carrier-attached metal foil which can suppress the number of foreign matter particles on the surface of a metal layer to enhance circuit formability, and can keep stable releasability even after heating at a high temperature of 240° C. or higher (for example, 260° C.) for a long period of time. The carrier-attached metal foil includes a carrier, a release functional layer provided on the carrier, the release functional layer including a metal oxynitride, and a metal layer provided on the release functional layer.

A transparent electroconductive layer 3 includes a first main surface 5 and a second main surface 6 facing each other in a thickness direction. The transparent electroconductive layer 3 is a single layer extending in a plane direction perpendicular to the thickness direction. The transparent electroconductive layer 3 has a plurality of crystal grains 4, a plurality of first grain boundaries 7 partitioning the plurality of crystal grains 4 and having each of one end edge 9 and another end edge 10 in the thickness direction open in each of the first main surface 5 and the second main surface 6, and a second grain boundary 8 branching from a first intermediate portion 11 of one first grain boundary 7A and reaching a second intermediate portion 12 of another first grain boundary 7B.

A strain gauge includes a flexible resin substrate and a resistor formed of material including at least one of chromium or nickel, the resistor being situated on one side of the substrate. The strain gauge includes a conductive layer formed on the other side of the substrate.