A device and a method for the coating of lenses. The lenses which are to be coated are arranged in pairs over parallel tubular targets such that they each overlap both a homogeneous and an inhomogeneous removal region of the target and the lenses rotated so that an especially uniform coating can be achieved.

The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.

Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Fluorinated coupling agents and polymerizable compositions including such fluorinated coupling agents and at least one free-radically polymerizable monomer, oligomer, or mixture thereof. Multilayer films including a substrate and at least a first layer overlaying a surface of the substrate also are described, in which the at least first layer includes a (co)polymer obtained by polymerizing the foregoing polymerizable compositions. Processes for making a multilayer film using the polymerizable composition also are taught. Articles including the multilayer film also are disclosed, in which the article preferably is selected from a photovoltaic device, a display device, a solid-state lighting device, a sensor, a medical or biological diagnostic device, an electrochromic device, light control device, or a combination thereof.

The method of preparing a laminate includes: preparing a process target, which is a laminate before being processed, where a light-shielding film has been disposed; and preparing a cleaned laminate through a first cleaning including applying UV rays and carbonated water to the process target, wherein the light-shielding film includes a transition metal and an element selected from the group consisting of oxygen, nitrogen, and carbon.

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

A conductive laminate for a touch panel including a substrate which is light-transmitting, an underlayer which is light-transmitting and formed on at least one surface of the substrate, a first copper oxynitride layer formed on the underlayer on an opposite side of the substrate, a copper layer formed on the first copper oxynitride layer on an opposite side of the underlayer, and a second copper oxynitride layer formed on the copper layer on an opposite side of the first copper oxynitride layer.

A laminate including a glass plate and a coating layer, wherein the coating layer includes one or more components selected from the group consisting of silicon nitride, titanium oxide, alumina, niobium oxide, zirconia, indium tin oxide, silicon oxide, magnesium fluoride, and calcium fluoride, wherein a ratio (dc/dg) of a thickness dc of the coating layer to a thickness dg of the glass plate is in a range of 0.05×10.sup.−3 to 1.2×10.sup.−3, and wherein a radius of curvature r1 of the laminate with negating of self-weight deflection is 10 m to 150 m.

Disclosed are a high-entropy carbide ceramic material and a preparation method thereof, and also a ceramic coating and its preparation method and use. The high-entropy carbide ceramic material has a chemical composition of (ZrCrTiVNb)C and includes Zr, Cr, Ti, V, and Nb, with a same mole fraction of 6-10%.

A method of forming a silicide film including: disposing a semiconductor wafer containing silicon as a constituent element in a sputtering chamber; evacuating an inside of the sputtering chamber until a pressure reaches 9×10.sup.−5 Pa or less; introducing a sputtering gas into the sputtering chamber and sputtering a target in the sputtering chamber to deposit a metal film on the semiconductor wafer; and causing a laser beam to be incident into the metal film deposited on the semiconductor wafer to form a metal silicide film by a silicide reaction.