A method for forming a low-resistivity tantalum thin film having the following steps: depositing a tantalum layer on a substrate, the tantalum of the layer having a β phase, treating the deposited tantalum layer by exposure to a radio frequency hydrogen plasma, such that the layer has tantalum in a mixed β-α phase, at least partially desorbing the hydrogen by carrying out at least one of the following steps: exposure to a radio frequency inert gas plasma, and thermal annealing. The treatment step being configured such that the tantalum layer is subjected to temperatures of less than or equal to 300° C.

A manufacturing facility for manufacturing an optical element according to a prescription includes a first station configured for surfacing and polishing a second face of a lens blank and pre-cleaning the second face of the lens blank including a finishing drying which allows the lens blank to be put on hold, a second station configured for deep cleaning the second face of the lens blank and hard coating the second face of the lens blank, a tunnel oven configured to degas the lens blank, a vacuum box coater configured to apply an antireflection (AR)-coating, and a third station configured to deblock the processed lens blank from the block piece.

The present invention provides a method for depositing an ultra-thin film onto a wafer. The method comprising the following steps. A sputtering chamber is provided wherein the sputtering chamber is collectively defined by a wafer handling apparatus and a magnetron. The wafer is placed onto a wafer chuck of the wafer handling apparatus. The wafer chuck is moved to a first distance to the magnetron. A gas is introduced into the sputtering chamber such that the gas is separated into a plasma, wherein the plasma includes gas ions. A first negative potential is applied to at least one sputtering target of the magnetron while the wafer chuck with the wafer is at the first distance to the magnetron. The wafer chuck is moved to a second distance to the magnetron. A second negative potential is applied to at least one sputtering target of the magnetron while the wafer chuck with the wafer is at the second distance to the magnetron. The wafer is removed from the wafer chuck after the application of the second negative potential to at least one sputtering target of the magnetron.

Provided are chrome-free adhesion pretreatment processes for use on a variety of reinforced or unreinforced plastics and polymers, such as polyimides, polyetherimides and polyvinylchloride. The pretreatment process can be performed in a combination of two sequential operations, which includes treating with a first solution containing nitric acid and subsequently treating with a second solution that includes sulfuric acid and periodate ions. Alternatively, the pretreatment process can be performed by treatment with a single combined composition that includes nitric acid, sulfuric acid, and periodate ions. The pretreatment processes, either done in two separate solutions, sequentially, or in one combined solution, produce an adherent surface for further metallization of the article, with adhesional values of the metal layer higher than those achieved using conventional chromic acid pretreatment processes.

An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.

A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

An apparatus for in-vivo measuring H.sub.2O.sub.2 oxidation within a living tissue. The apparatus includes an electrochemical probe and an electrochemical stimulator-analyzer. The electrochemical probe includes a sensing part and a handle. The sensing part includes a working electrode, a counter electrode, and a reference electrode. The working electrode includes a first biocompatible conductive needle coated with a layer of vertically aligned multi-walled carbon nanotubes. The counter electrode includes a second biocompatible conductive needle. The reference electrode includes a third biocompatible conductive needle. The electrochemical stimulator-analyzer is configured to generate a set of electrical currents in a portion of the living tissue.

A method for preparing a super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film is provided. A substrate is ultrasonically cleaned in absolute ethyl alcohol and acetone sequentially for 15 min. The substrate is cleaned by argon plasma bombardment for 15 min. A fullerene-like carbon layer A having an onion-like structure is prepared by high-vacuum medium-frequency magnetron sputtering for 30 s. A graphene-like boron nitride layer B is prepared by high-vacuum medium-frequency magnetron sputtering and coating device to sputter the elemental boron target for 30 s. Steps (3) and (4) are repeated 80 times to overlay the fullerene-like carbon layer A and the graphene-like boron nitride layer B in an alternate way. The super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film has a large load capacity, and excellent wear resistance, high temperature resistance and super lubrication.

A coated substrate includes a base substrate and a base layer disposed over the substrate. Typically, the base layer is composed of a component selected from the group consisting of zirconium carbonitrides, zirconium oxycarbides, titanium carbonitrides, titanium oxycarbides, and combinations thereof. One or more copper-containing antimicrobial layers are disposed over the base layer such that each of the one or more copper-containing antimicrobial layers includes copper atoms in the +1 oxidation state and/or the +2 oxidation state.

A substrate for a display article includes: a primary surface; a textured region on at least a portion of the primary surface, the textured region comprising surface features that reflect a random distribution, each of the surface features comprising a perimeter that is parallel to a base-plane extending through a thickness of the substrate below the textured region, wherein the perimeter is elliptical. The textured region can further include (i) one or more higher surfaces residing at a higher mean elevation from the base-plane and (ii) one or more lower surfaces residing at a lower mean elevation from the base-plane that is closer to the base-plane than the higher mean elevation. The higher mean elevation can differ from the lower mean elevation by a distance within a range of 0.05 μm to 0.70 μm.