C23C14/024

Coated cutting tool
11583935 · 2023-02-21 · ·

A coated cutting tool is provided which allows for satisfactory machining over a long period of time, particularly in the machining of difficult-to-machine materials with low thermal conductivity. The coated cutting tool includes a substrate and a coating layer formed on a surface of the substrate, wherein: at least one layer of the coating layer comprises a predetermined layer containing a compound having a composition represented by the formula: (Al.sub.XTi.sub.1-X)N [wherein x denotes an atomic ratio of the Al element based on a total of the Al element and the Ti element, and x satisfies 0.60≤x≤0.85]; a value of an orientation index TC (311) of a cubic (311) plane of the predetermined layer is from 2.5 or more to 4.2 or less; and an average thickness of the predetermined layer is from 1.0 μm or more to 12.0 μm or less.

EPITAXIAL GROWTH OF ALUMINUM ON ALUMINUM-NITRIDE COMPOUNDS

Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

NANOCOMPOSITE-SEEDED EPITAXIAL GROWTH OF SINGLE-DOMAIN LITHIUM NIOBATE THIN FILMS FOR SURFACE ACOUSTIC WAVE DEVICES
20220364265 · 2022-11-17 ·

A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10.sup.−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO.sub.3.

FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

TREATING SULFIDE GLASS SURFACES AND MAKING SOLID STATE LAMINATE ELECTRODE ASSEMBLIES

Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.

COATED CUTTING TOOL
20230033516 · 2023-02-02 ·

A coated cutting tool and a process for the production thereof id provided. The coated cutting tool consists of a substrate body of WC-Co based cemented carbide and a coating, the coating including a first (Ti,Al)N multilayer, a first gamma-aluminium oxide layer, and a set of alternating second (Ti,Al)N multilayers and second gamma-aluminium oxide layers.

PHYSICAL VAPOR DEPOSITION OF PIEZOELECTRIC FILMS

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

METAL TONE DECORATIVE SHEET AND METAL TONE DECORATIVE MOLDED BODY PROVIDED WITH METAL TONE DECORATIVE SHEET

A metal tone decorative sheet has an excellent metallic luster and electromagnetic wave transmissivity, and a metal tone decorative molded body is provided with the metal tone decorative sheet. A metal tone decorative sheet includes a metal layer on a base material layer, wherein the metal layer includes a plurality of island portions containing metal and a sea portion positioned between the island portions, the island portion is a convex quadrangle in a cross-sectional view, one side of the quadrangle being opposed to the base material layer, and 0≤x-y≤80 where a length of a side of the island portion on the base material layer side is x [nm] and a length of a side of the island portion on an opposite side to the base material layer is y [nm].

METHOD FOR DEPOSITING A CONDUCTIVE COATING ON A SURFACE

A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.

Physical vapor deposition of piezoelectric films

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.